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      • Development of 1700V Hybrid Module with Si-IGBT and SiC-SBD for High Efficiency

        T. Takaku,H. Wang,N. Matsuda,S. Igarashi,T. Nishimura,S. Miyashita,O. Ikawa 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6

        This paper describes about newly developed 1700V/400A hybrid module which consists of Si-IGBT and SiC-SBD. The static and dynamic characteristics were evaluated and the turn-on loss is 38% lower and the reverse recovery loss is 83% lower than the conventional all-Si IGBT module because of the reverse recovery current of SiC-SBD is very small to be an unipolar device. The radiation noise on hybrid module becomes higher with increasing collector current, but the peak value of the noise from hybrid module is almost same as the all-Si module if the collector current is less than 300A. In AC690V PWM inverter, the total power dissipation of hybrid module is 8% lower at 1 kHz and 29% lower at 10 kHz compare to the all Si module. Therefore the 1700V hybrid module is useful as a power module for an AC690V high efficiency inverter system such as wind power generation system and high voltage solar power generation system. This paper reports about the static and dynamic characteristics and the radiation noise measurement results on the 400A/1700V hybrid module.

      • The Advanced 7<SUP>th</SUP> Generation IGBT Module for High Power Density Technology

        J. Kawabata,Y. Kusunoki,Y. Onozawa,Y. Nishimura,Y. Kobayashi,O. Ikawa 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6

        Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules were significantly improved. Additionally, the maximum operating temperature was even increased to up to 175°C. The new 7<SUP>th</SUP> generation IGBT module realized further downsizing and higher efficiency of power conversion systems.

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