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Kim, Ran,Amegadze, Paul S. K.,Kang, Il,Yun, Huix2010,Jun,Noh, Yong‐,Young,Kwon, Soonx2010,Ki,Kim, Yunx2010,Hi WILEY‐VCH Verlag 2013 Advanced Functional Materials Vol.23 No.46
<P><B>Abstract</B></P><P>A high‐performance naphthalene diimide (NDI)‐based conjugated polymer for use as the active layer of n‐channel organic field‐effect transistors (OFETs) is reported. The solution‐processable n‐channel polymer is systematically designed and synthesized with an alternating structure of long alkyl substituted‐NDI and thienylene–vinylene–thienylene units (PNDI‐TVT). The material has a well‐controlled molecular structure with an extended π‐conjugated backbone, with no increase in the LUMO level, achieving a high mobility and highly ambient stable n‐type OFET. The top‐gate, bottom‐contact device shows remarkably high electron charge‐carrier mobility of up to 1.8 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> (<I>I</I><SUB>on</SUB>/<I>I</I><SUB>off</SUB> = 10<SUP>6</SUP>) with the commonly used polymer dielectric, poly(methyl methacrylate) (PMMA). Moreover, PNDI‐TVT OFETs exhibit excellent air and operation stability. Such high device performance is attributed to improved π–π intermolecular interactions owing to the extended π‐conjugation, apart from the improved crystallinity and highly interdigitated lamellar structure caused by the extended π–π backbone and long alkyl groups.</P>
Yook, Kyoung Soo,Jeon, Soon Ok,Min, Sung‐,Yong,Lee, Jun Yeob,Yang, Hax2010,Jin,Noh, Taeyong,Kang, Sung‐,Kee,Lee, Taex2010,Woo WILEY‐VCH Verlag 2010 Advanced Functional Materials Vol.20 No.11
<P><B>Abstract</B></P><P>Cesium azide (CsN<SUB>3</SUB>) is employed as a novel n‐dopant because of its air stability and low deposition temperature. CsN<SUB>3</SUB> is easily co‐deposited with the electron transporting materials in an organic molecular beam deposition chamber so that it works well as an n‐dopant in the electron transport layer because its evaporation temperature is similar to that of common organic materials. The driving voltage of the p‐i‐n device with the CsN<SUB>3</SUB>‐doped n‐type layer and a MoO<SUB>3</SUB>‐doped p‐type layer is greatly reduced, and this device exhibits a very high power efficiency (57 lm W<SUP>−1</SUP>). Additionally, an n‐doping mechanism study reveals that CsN<SUB>3</SUB> was decomposed into Cs and N<SUB>2</SUB> during the evaporation. The charge injection mechanism was investigated using transient electroluminescence and capacitance–voltage measurements. A very highly efficient tandem organic light‐emitting diodes (OLED; 84 cd A<SUP>−1</SUP>) is also created using an n–p junction that is composed of the CsN<SUB>3</SUB>‐doped n‐type organic layer/MoO<SUB>3</SUB> p‐type inorganic layer as the interconnecting unit. This work demonstrates that an air‐stable and low‐temperature‐evaporable inorganic n‐dopant can very effectively enhance the device performance in p‐i‐n and tandem OLEDs, as well as simplify the material handling for the vacuum deposition process.</P>
Yun, Jinx2010,Mun,Yeo, Junx2010,Seok,Kim, Juhwan,Jeong, Hyung‐,Gu,Kim, Dong‐,Yu,Noh, Yong‐,Jin,Kim, Seokx2010,Soon,Ku, Bonx2010,Cheol,Na, Seokx2010,In WILEY‐VCH Verlag 2011 Advanced Materials Vol.23 No.42
<P><B>The preparation of a reduced graphene oxide (pr‐Go) is with a novel p‐TosNHNH2 reductant</B> is demonstrated for use as an efficient anode interfacial layer for high‐performance and highstability organic solar cells (OSCs). The efficiency of the cells with pr‐GO is highly comparable to those of the PEDOT:PSSbased devices. Furthermore, the pr‐GO based OSCs show a much longer cell life time in air stability tests in comparison with PEDOT:PSS‐based cells.</P>
Baeg, Kang‐,Jun,Khim, Dongyoon,Jung, Soonx2010,Won,Kang, Minji,You, Inx2010,Kyu,Kim, Dong‐,Yu,Facchetti, Antonio,Noh, Yong‐,Young WILEY‐VCH Verlag 2012 Advanced Materials Vol.24 No.40
<P>On page 5433, Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injection and transport for n‐channel dominant N2200 OFETs. The significant enhancement of hole mobility in N2200 OTFTs is attributed to the strong dipoles in fluorinated high‐k gate dielectric blend of P(VDF‐TrFE):PMMA. </P>
Yun, Jinx2010,Mun,Yeo, Junx2010,Seok,Kim, Juhwan,Jeong, Hyung‐,Gu,Kim, Dong‐,Yu,Noh, Yong‐,Jin,Kim, Seokx2010,Soon,Ku, Bonx2010,Cheol,Na, Seokx2010,In WILEY‐VCH Verlag 2011 Advanced Materials Vol.23 No.42
<P>Solution‐processable reduced graphene oxide as a hole‐transporting layer for highly efficient and stable organic solar cells is reported on page 4923 by Dong‐Yu Kim, Seok‐In Na, and co‐workers. Introduction of a newly reduced graphene oxide by simple solution processing into solar cells dramatically raises the cell efficiency and cell life‐time. The results will allow full use of chemically reduced graphene and will advance the realization of carbon‐based printable optoelectronic devices. </P>
Baeg, Kang‐,Jun,Khim, Dongyoon,Jung, Soonx2010,Won,Kang, Minji,You, Inx2010,Kyu,Kim, Dong‐,Yu,Facchetti, Antonio,Noh, Yong‐,Young WILEY‐VCH Verlag 2012 ADVANCED MATERIALS Vol.24 No.40
<P><B>A remarkable enhancement of p‐channel properties</B> is achieved in initially n‐channel dominant ambipolar P(NDI2OD‐T2) organic field‐effect transistors (OFETs) by the use of the fluorinated high‐k dielectric P(VDF‐TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high‐performance complementary‐like inverters and ring oscillator circuits.</P>
Shin, Sux2010,Jin,Kim, Sang Yong,Choi, Yoon Young,Son, Taeil,Cheong, Jaex2010,Ho,Hyung, Woo Jin,Noh, Sung Hoon,Park, Chung‐,Gyu,Kim, Hyoung‐,Il AlphaMed Press 2019 The oncologist Vol.24 No.9
<P>This article reports on the relationship between microsatellite instability (MSI) status and the antitumor host immune response, focusing on the affect of these factors on prognosis in MSI‐high versus non MSI‐high gastric cancer.</P><P><B>Background.</B></P><P>Microsatellite instability (MSI)‐high (MSI‐H) colorectal cancer is known to be associated with increased tumor‐infiltrating lymphocytes (TILs), elevated host systemic immune response, and a favorable prognosis. In gastric cancer, however, MSI status has rarely been evaluated in the context of TILs and systemic immune response.</P><P><B>Materials and Methods.</B></P><P>We evaluated data for 345 patients with gastric cancer who underwent gastrectomy with MSI typing. The numbers of TILs were counted after immunohistochemical staining with anti‐CD3, CD4, CD8, forkhead box P3 (Foxp3), and granzyme B to quantify the subsets of TILs. To evaluate the systemic immune response, the differential white blood cell count and prognostic nutritional index (PNI) were obtained.</P><P><B>Results.</B></P><P>Of the 345 patients, 57 demonstrated MSI‐H tumors and 288 demonstrated non‐MSI‐H tumors. MSI‐H tumors carried significantly higher densities of CD8+ T cells, Foxp3+ T cells, and granzyme B+ T cells and a higher ratio of Foxp3/CD4 and granzyme B/CD8. The prognostic impact of TILs differed between patients with MSI‐H tumors and those with non‐MSI‐H tumors. The TIL subsets were not found to be significant prognostic factors for recurrence‐free survival (RFS) or overall survival (OS) in the MSI‐H tumor group. In the non‐MSI‐H tumor group, multivariate analysis showed that stage, PNI, and CD4+ T cells were independent prognostic factors for RFS, and stage, PNI, and the Foxp3/CD4 ratio were independent prognostic factors for OS.</P><P><B>Conclusions.</B></P><P>The association between systemic/local immune response and prognosis differed according to MSI status. Different tumor characteristics and prognoses according to MSI status could be associated with the immunogenicity caused by microsatellite instability and subsequent host immune response.</P><P><B>Implications for Practice.</B></P><P>This study demonstrates that the density of each subset of tumor‐infiltrating lymphocytes (TILs) differed between microsatellite instability (MSI)‐high and non‐MSI‐high tumors. Moreover, the prognostic effect of the preoperative systemic immune response status and TILs differed between the MSI‐high (MSI‐H) and non‐MSI‐H tumor groups. The present study may help to identify the mechanisms of cancer progression and develop treatment strategies for MSI‐high gastric cancer.</P>
Polymer Nanomicelles for Efficient Mucus Delivery and Antigen‐Specific High Mucosal Immunity
Noh, Young‐,Woock,Hong, Ji Hyun,Shim, Sang‐,Mu,Park, Hye Sun,Bae, Hee Ho,Ryu, Eun Kyoung,Hwang, Jung Hwan,Lee, Chulx2010,Ho,Cho, Seong Hun,Sung, Moonx2010,Hee,Poo, Haryoung,Lim, Yong T WILEY‐VCH Verlag 2013 Angewandte Chemie Vol.125 No.30
<P><B>Micellen für die Schleimhautimmunität</B>: Ein mukosales Impfsystem wurde hergestellt, das auf γ‐PGA‐Nanomicellen und viralen Antigenen basiert. Die intranasale Verabreichung des Impfsystems löst eine starke Immunreaktion der humoralen sowie der zellulären Immunität aus (siehe Bild).</P>
Kim, Tae Heon,Jeon, Byung Chul,Min, Taeyoon,Yang, Sang Mo,Lee, Daesu,Kim, Yong Su,Baek, Seung‐,Hyub,Saenrang, Wittawat,Eom, Chang‐,Beom,Song, Tae Kwon,Yoon, Jong‐,Gul,Noh, Tae Won WILEY‐VCH Verlag 2012 Advanced Functional Materials Vol.22 No.23
<P><B>Abstract</B></P><P>It is demonstrated that electric transport in Bi‐deficient Bi<SUB>1‐<I>δ</I></SUB>FeO<SUB>3</SUB> ferroelectric thin films, which act as a p‐type semiconductor, can be continuously and reversibly controlled by manipulating ferroelectric domains. Ferroelectric domain configuration is modified by applying a weak voltage stress to Pt/Bi<SUB>1‐<I>δ</I></SUB>FeO<SUB>3</SUB>/SrRuO<SUB>3</SUB> thin‐film capacitors. This results in diode behavior in macroscopic charge‐transport properties as well as shrinkage of polarization‐voltage hysteresis loops. The forward current density depends on the voltage stress time controlling the domain configuration in the Bi<SUB>1‐<I>δ</I></SUB>FeO<SUB>3</SUB> film. Piezoresponse force microscopy shows that the density of head‐to‐head/tail‐to‐tail unpenetrating local domains created by the voltage stress is directly related to the continuous modification of the charge transport and the diode effect. The control of charge transport is discussed in conjunction with polarization‐dependent interfacial barriers and charge trapping at the non‐neutral domain walls of unpenetrating tail‐to‐tail domains. Because domain walls in Bi<SUB>1‐<I>δ</I></SUB>FeO<SUB>3</SUB> act as local conducting paths for charge transport, the domain‐wall‐mediated charge transport can be extended to ferroelectric resistive nonvolatile memories and nanochannel field‐effect transistors with high performances conceptually.</P>
Kang, Minji,Baeg, Kang‐,Jun,Khim, Dongyoon,Noh, Yong‐,Young,Kim, Dong‐,Yu WILEY‐VCH Verlag 2013 Advanced Functional Materials Vol.23 No.28
<P><B>Abstract</B></P><P>The effects of using a blocking dielectric layer and metal nanoparticles (NPs) as charge‐trapping sites on the characteristics of organic nano‐floating‐gate memory (NFGM) devices are investigated. High‐performance NFGM devices are fabricated using the n‐type polymer semiconductor, poly{[<I>N</I>,<I>N</I>′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2)), and various metal NPs. These NPs are embedded within bilayers of various polymer dielectrics (polystyrene (PS)/poly(4‐vinyl phenol) (PVP) and PS/poly(methyl methacrylate) (PMMA)). The P(NDI2OD‐T2) organic field‐effect transistor (OFET)‐based NFGM devices exhibit high electron mobilities (0.4–0.5 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) and reliable non‐volatile memory characteristics, which include a wide memory window (≈52 V), a high on/off‐current ratio (<I>I</I><SUB>on</SUB>/<I>I</I><SUB>off</SUB> ≈ 10<SUP>5</SUP>), and a long extrapolated retention time (>10<SUP>7</SUP> s), depending on the choice of the blocking dielectric (PVP or PMMA) and the metal (Au, Ag, Cu, or Al) NPs. The best memory characteristics are achieved in the ones fabricated using PMMA and Au or Ag NPs. The NFGM devices with PMMA and spatially well‐distributed Cu NPs show quasi‐permanent retention characteristics. An inkjet‐printed flexible P(NDI2OD‐T2) 256‐bit transistor memory array (16 × 16 transistors) with Au‐NPs on a polyethylene naphthalate substrate is also fabricated. These memory devices in array exhibit a high <I>I</I><SUB>on</SUB>/<I>I</I><SUB>off</SUB> (≈10<SUP>4 ± 0.85</SUP>), wide memory window (≈43.5 V ± 8.3 V), and a high degree of reliability.</P>