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Boussairi Bouzazi,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi 한국물리학회 2013 Current Applied Physics Vol.13 No.7
Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the main nitrogen-related nonradiative recombination center (E1), localized at 0.33 eV below the bottom edge of the conduction band of the alloy. On one hand, the electron irradiation was found to enhance the density of E1 depending on the fluence dose. On the other hand, the hydrogenation was found to passivate completely E1. Furthermore,two new lattice defects were only observed in hydrogenated GaAsN films and were suggested to be in relationship with the origin of E1. The first defect was an electron trap at average thermal activation energy of 0.41 eV below the CBM of GaAsN and was identified to be the EL5-type native defect in GaAs,originating from interstitial arsenic (Asi). The second energy level was a hole trap, newly observed at average thermal activation energy of 0.11 eV above the valence band maximum of the alloy and its origin was tentatively suggested to be in relationship with the monohydrogenenitrogen (NeH) complex. As the possible origin of E1 was tentatively associated with the split interstitial formed from one N atom and one As atom in single V-site [(NeAs)As], we strongly suggested that the new hole trap took place after the dissociation of E1 and the formation of NeH complex.
Properties of Chemical Beam Epitaxy grown GaAs0.995N0.005 homo-junction solar cell
Boussairi Bouzazi,Kenichi Nishimura,Hidetoshi Suzuki,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi 한국물리학회 2010 Current Applied Physics Vol.10 No.2
The minority carrier diffusion length in Chemical Beam Epitaxy (CBE) grown GaAs0.995N0.005 based homojunction solar cell was estimated and found to be L = 0.08 lm. In addition, the majority carrier traps in Nvarying unintentionally doped p-type GaAsN samples grown by CBE were investigated using Deep Level Transient Spectroscopy (DLTS) technique. Five hole traps, HC1–HC5, were detected, where HC2 and HC5coexist in all samples. These two hole traps were suggested to be a N-related defect and the double donor state of EL2, respectively.
Relation between N–H complexes and electrical properties of GaAsN determined by H implantation
Jong-Han Lee,Hidetoshi Suzuki,Xiuxun Han,Katahiko Honda,Tomohiro Tanaka,Jong-Ha Hwang,Boussairi Bouzazi,Makoto Inagaki,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi 한국물리학회 2010 Current Applied Physics Vol.10 No.3
We investigated the relation between N–H complexes and the electrical properties of GaAsN, which is a potential material for fabricating super-high-efficiency multi-junction tandem solar cells. In order to separate the effect of other residual carrier such as carbon in a GaAsN film on the electrical properties, hydrogen (H) ions were implanted into GaAsN grown by chemical beam epitaxy (CBE) and then rapid thermal annealing from 250 to 650 ℃ was carried out. Two N–H complexes related to local vibrational modes (LVMs) in GaAsN were observed at 3098 and 3125 cm-1. With an increasing annealing temperature,the integrated peak intensity of the 3098 cm-1 peak (I3098) decreased, while that of the 3125 cm-1 peak (I3125) increased. This indicates that N–H complexes related to the 3125 cm-1 peak are thermally more stable than those related to the other peak. The hole concentrations and mobilities exhibited an increasing trend until an annealing temperature of 550 ℃ was reached. Their increases are attributed to the removal of donor-type defects. It is suggested that the N–H complexes related to the 3098 cm-1 peak are electrically active, while those giving the 3125 cm-1 peak are inactive.