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Research of Gap Filler Material in the GaN Transistor Thermal Management
Bainan Sun,Niels Elkjær Iversen,Zhe Zhang,Michael A.E. Andersen 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications.