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백문철,김성일,강광용,Paek, M.C.,Kim, S.I.,Kang, K.Y.,Nagatsuma, T. 한국전자통신연구원 2009 전자통신동향분석 Vol.24 No.5
새로운 전파자원으로서 초고속 무선통신뿐만 아니라 분광, 센싱, 이미징 등 여러 분야에서 다양한 응용이 기대되는 연속 밀리미터파와 테라헤르츠-파에 대한 발생 및 응용기술을 논하였다. 밀리미터파의 경우 전자소자를 이용한 방법을 주로 사용하지만, 테라헤르츠-파는 전자 및 광기술을 모두 사용하여 발생시킬 수 있다. 본 글에서는 광학적 방식을 이용한 연속 밀리미터/테라헤르츠-파의 발생기술과 이를 이용한 응용기술에 대하여 논하였다. 최근 고출력 PD의 기술발전에 따라 광학적 발생방식의 밀리미터/테라헤르츠-파를 이용한 CW 분광 측정이 유용할 것으로 보인다. 현 단계에서 1THz에서의 최대 가용 출력은 약 $10{\mu}W$ 정도이나, 포화전류와 열 관리 문제를 해결하고 PD 성능의 개선을 함으로써, 단일 소자에서 1THz에 대한 최대 가용출력이 $100{\mu}W$ 수준이 될 것으로 기대된다. 연속 밀리미터/테라헤르츠-파 분광법은 더욱 정밀하고, 다양하며 경제적인 분광 시스템 기술에 크게 기여할 것으로 전망된다.
Novel fabrication technologies of planar nano-gap electrodesfor single molecule evaluation
Ken Tsutsui,Masashi Nakata,Masayuki Morita,Masahide Tokuda,Kazuyuki Nagatsuma,Harumasa Onozato,Tadao Kaneko,Tomohiko Edura,Yoshio Mita,고이누마히데오미,Yasuo Wada 한국물리학회 2007 Current Applied Physics Vol.7 No.4
Present information technologies use semiconductor devices and magnetic/optical disc. However, they are all foreseen to face funda-mental limitations within a decade. Therefore, superseding devices are required for the next paradigm of high performance informationare expected as the most probable candidate to supersede the present semiconductor devices. The rst milestone towards the realizationof single molecule devices in future electronics requires quantitative evaluation of single molecule characteristics, which inevitably needsplanar nano-gap electrodes between which single molecules are sandwiched, observed their structures and measured their electrical char-acteristics. Nano-meter electrode pattern fabrication was achieved by electron beam lithography and metal lift-o, while planarizationprocessing technologies are described in this paper to realize nm-planar nano-scale electrodes.
Generation of Coherent Sub-Terahertz Carrier with Phase Stabilization for Wireless Communications
Yoshimizu, Yasuyuki,Hisatake, Shintaro,Kuwano, Shigeru,Terada, Jun,Yoshimoto, Naoto,Nagatsuma, Tadao The Korea Institute of Information and Commucation 2013 Journal of communications and networks Vol.15 No.6
In this paper, we present a photonic approach for generating highly stable coherent sub-terahertz (THz) signals for wireless communications. As proof-of-concept we transmit data at 100 GHz carrier frequency using on-off keying modulation and heterodyne detection. The sub-THz carrier signals are generated by photo-mixing two optical carrier signals at different frequencies, extracted from an optical frequency comb. We introduce a novel system to stabilize the phase of the optical carrier signals. Error-free transmission is successfully achieved up to a bit rate of 8.5 Gbit/s at 100 GHz.
Generation of Coherent Sub-Terahertz Carrier with Phase Stabilization for Wireless Communications
Yasuyuki Yoshimizu,Shintaro Hisatake,Shigeru Kuwano,Jun Terada,Naoto Yoshimoto,Tadao Nagatsuma 한국통신학회 2013 Journal of communications and networks Vol.15 No.6
In this paper, we present a photonic approach forgenerating highly stable coherent sub-terahertz (THz) signals forwireless communications. As proof-of-concept we transmit data at100 GHz carrier frequency using on-off keying modulation andheterodyne detection. The sub-THz carrier signals are generatedby photo-mixing two optical carrier signals at different frequencies,extracted from an optical frequency comb. We introducea novel system to stabilize the phase of the optical carrier signals. Error-free transmission is successfully achieved up to a bitrate of 8.5 Gbit/s at 100 GHz.
Wireless Communication at 310 GHz Using GaAs High-Electron-Mobility Transistors for Detection
Stéphane Blin,Lucie Tohme,Dominique Coquillat,Shogo Horiguchi,Yusuke Minamikata,Shintaro Hisatake,Philippe Nouvel,Thomas Cohen,Annick Pénarier,Fabrice Cano,Luca Varani,Wojciech Knap,Tadao Nagatsuma 한국통신학회 2013 Journal of communications and networks Vol.15 No.6
We report on the first error-free terahertz (THz) wirelesscommunication at 0.310 THz for data rates up to 8.2 Gbps using a18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-availableplasma-wave transistors whose cut-off frequency is far below THzfrequencies can be employed in THz communication. Wirelesscommunication over 50 cm is presented at 1.4 Gbps using a unitravelling-carrier photodiode as a source. Transistor integration isdetailed, as it is essential to avoid any deleterious signals that wouldprevent successful communication. We observed an improvementof the bit error rate with increasing input THz power, followed bya degradation at high input power. Such a degradation appearsat lower powers if the photodiode bias is smaller. Higher-dataratecommunication is demonstrated using a frequency-multipliedsource thanks to higher output power. Bit-error-ratemeasurementsat data rates up to 10 Gbps are performed for different inputTHz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at somespecific data rates. This effect is probably due to deleterious cavityeffects and/or impedance mismatches. Using such a system, realtimeuncompressed high-definition video signal is successfully androbustly transmitted.