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Argunova, Tatiana S.,Gutkin, Mikhail Yu.,Kazarova, O.P.,Mokhov, E.N.,Nagalyuk, Sergey S.,Je, Jung H. Trans Tech Publications, Ltd. 2015 Materials science forum Vol.821 No.-
<P>We report on the growth method and the structural characterization of freestanding AlN crystals. An AlN layer is grown on a gradually decomposing SiC substrate yielding a freestanding crack free 2H single crystal with dislocation density 5×10<SUP>4</SUP>cm<SUP>-2</SUP>and without grain boundaries as confirmed by synchrotron radiation phase contrast imaging and topography data. Wafers of 600-1000 μm thick and up to 15 mm in diameter are obtained. The thermal stress distribution in a conventional AlN/SiC structure is discussed. Theoretical estimates show that cracking of AlN layers is a natural result of their growth on undecomposed SiC substrates.</P>