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RISS 인기검색어
- 검색키워드
- 저자 : Na. Kimura (검색결과 4 건)
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Liquid crystal alignment on patterned-alignment films
Jais Bin Lias,Thet Naing Oo,Tomohiro Yazawa,Munehiro Kimura,Tadashi Akahanea 한국정보디스플레이학회 2011 Journal of information display Vol.12 No.2
To come up with a bistable liquid crystal (LC) device using unpolarized UV light, single-step laser patterning on a photoalignment layer using a photomask was proposed to achieve an equilibrium configuration of LC molecules in contact with a periodically patterned substrate. The patterns were formed by stripes of alternating random planar and homeotropic anchoring on a submicrometer scale in the order of 0.5μm. Two possible configurations of bistable LC cells that can be obtained by combining a micropatterned surface formed with alternating random-planar- and homeotropic-alignment with planar- or homeotropic-alignment surfaces were proposed. The alignment properties of the two proposed models were investigated, along with the microscopic switching behavior of micropatterned nematic LC cells.
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Liquid crystal alignment on patterned-alignment films
Lias, Jais Bin,Oo, Thet Naing,Yazawa, Tomohiro,Kimura, Munehiro,Akahane, Tadashi The Korean Infomation Display Society 2011 Journal of information display Vol.12 No.2
To come up with a bistable liquid crystal (LC) device using unpolarized UV light, single-step laser patterning on a photoalignment layer using a photomask was proposed to achieve an equilibrium configuration of LC molecules in contact with a periodically patterned substrate. The patterns were formed by stripes of alternating random planar and homeotropic anchoring on a submicrometer scale in the order of $0.5{\mu}m$. Two possible configurations of bistable LC cells that can be obtained by combining a micropatterned surface formed with alternating random-planar- and homeotropic-alignment with planar- or homeotropic-alignment surfaces were proposed. The alignment properties of the two proposed models were investigated, along with the microscopic switching behavior of micropatterned nematic LC cells.
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Photoluminescence of a Periodic Alloy of ZnSeTe Grown by Using MBE
G. Shigaura,M. Kanamori,Y. Ichinohe,K. Kyoh,K. Honma,Na. Kimura,No. Kimura,T. Sawada,K. Suzuki,K. Imai 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Te-doped ZnSe indicates strong emission bands in the blue-green region at low temperatures. The ZnSe-ZnTe superlattices with thin ZnTe layers (less than 1 monolayer), whose X-ray proles show a trace of satellite peaks due to the superstructure, have very high photoluminescence (PL) efficiency at 2.3 eV at room temperature. In the samples that have no superstructure in the X-ray measurements, Te acts as an isoelectronic impurity indicating strong PL at only low temperatures. In the sample with a superstructure, the ZnTe parts consist of dots with high PL efficiency. Te-doped ZnSe indicates strong emission bands in the blue-green region at low temperatures. The ZnSe-ZnTe superlattices with thin ZnTe layers (less than 1 monolayer), whose X-ray proles show a trace of satellite peaks due to the superstructure, have very high photoluminescence (PL) efficiency at 2.3 eV at room temperature. In the samples that have no superstructure in the X-ray measurements, Te acts as an isoelectronic impurity indicating strong PL at only low temperatures. In the sample with a superstructure, the ZnTe parts consist of dots with high PL efficiency.
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Photoluminescence of Modulation-Doped ZnSe:Te Grown by Using MBE
K. Imai,Y. Ichinohe,M. Kanamori,K. Kyoh,K. Honma,Na. Kimura,No. Kimura,T. Sawada,K. Suzuki,G. Shigaura 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Modulation-doped ZnSe:Te samples, which indicate quite strong emissions at 2.68 (S1) and 2.42 (S2) eV at low temperatures, have been grown by using MBE. The samples consist of a ZnSe-ZnTe superstructure with ultra-thin ZnTe layers. The sample, which has S1 and S2 emission bands simultaneously, has a carrier transfer process from the S1 to the S2 state. The process leads to a super-linear dependence of the intensity of the S1 emission on the excitation intensity. We predict that the S1 and the S2 band construct a double well potential in the sample which indicates both emissions simultaneously. Modulation-doped ZnSe:Te samples, which indicate quite strong emissions at 2.68 (S1) and 2.42 (S2) eV at low temperatures, have been grown by using MBE. The samples consist of a ZnSe-ZnTe superstructure with ultra-thin ZnTe layers. The sample, which has S1 and S2 emission bands simultaneously, has a carrier transfer process from the S1 to the S2 state. The process leads to a super-linear dependence of the intensity of the S1 emission on the excitation intensity. We predict that the S1 and the S2 band construct a double well potential in the sample which indicates both emissions simultaneously.
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