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Reactively Sputtered MgAl2O4 Barrier Layers for Heusler Tunnel Junctions
K. Inagaki,N. Fukatani,K. Mari,H. Fujita,T. Miyawaki,K. Ueda,H. Asano 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
Epitaxial MgAl2O4 thin films were deposited on a lattice-matched Heusler alloy, Fe2CrSi,by reactive magnetron sputtering of an MgAl2 target in an Ar+O2 atmosphere. EpitaxialFe2CrSi/MgAl2O4 junctions were obtained by inserting an ultrathin MgAl2 interlayer, which workedas a protective layer for oxidization at the surface of the Fe2CrSi. The growth of MgAl2O4 was foundto be very sensitive to the MgAl2 thickness and the oxygen partial pressure during the deposition ofMgAl2O4. Both epitaxial growth and characteristics of the efficient tunneling barrier were obtainedin an Fe2CrSi/MgAl2O4 (3 nm)/CoFe tunneling device for MgAl2O4 thin films grown by reactivesputtering. The present epitaxial MgAl2O4 barrier deposited by reactive sputtering is expected torealize high performance spintronic devices.
Epitaxial Growth and Physical Properties of Heusler/Perovskite Heterostructures
K. Kobayashi,N. Fukatani,H. Kawada,K. Ueda,K. Sakuma,H. Asano 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
Multiferroic heterostructures of the ferromagnetic, half-metallic Heusler Fe2CrSi (FCS) and theferroelectric perovskite Ba0.7Sr0.3TiO3 (BSTO) have been formed by magnetron sputtering, andtheir magnetic and ferroelectric properties have been investigated. FCS/BSTO bilayer structureswere epitaxially grown on LaAlO3 substrates with epitaxial relationships of FCS (001)[110]//BSTO(001)[100]. Multiferroic properties with a remanent polarization of 10.6 µC/cm2 and a saturationmagnetization of 417 emu/cc were observed for the FCS/BSTO heterostructures at room temperature. These results suggest that the Heusler/perovskite epitaxial heterostructure is a promisingcandidate for fabricating multiferroic devices.