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Nonlocal Transport in the Quantum Spin Hall State
Roth, A.,Brune, C.,Buhmann, H.,Molenkamp, L. W.,Maciejko, J.,Qi, X.-L.,Zhang, S.-C. American Association for the Advancement of Scienc 2009 Science Vol.325 No.5938
<P>Nonlocal transport through edge channels holds great promise for low-power information processing. However, edge channels have so far only been demonstrated to occur in the quantum Hall regime, at high magnetic fields. We found that mercury telluride quantum wells in the quantum spin Hall regime exhibit nonlocal edge channel transport at zero external magnetic field. The data confirm that the quantum transport through the (helical) edge channels is dissipationless and that the contacts lead to equilibration between the counterpropagating spin states at the edge. The experimental data agree quantitatively with the theory of the quantum spin Hall effect. The edge channel transport paves the way for a new generation of spintronic devices for low-power information processing.</P>
3,600 m3/h 의 하수처리수 탈질을 위한 유동상 생물여과
(Kramer J . P .),(Wouters J . W .),(Noordink M . P . M .),(Molenkamp H . W .),(Anink D . M . E .),(Janus J . M .) 한국수처리학회 2000 한국수처리학회지 Vol.8 No.3
STP De Groote Lucht in the Netherlands had to he upgraded in order to meet the tightened criterion for total nitrogen (10㎎/ℓ N as yearly average). ASTRASAND moving bed biofiltration, is introduced for post-denitrification. Pilot plant tests were executed in 1996 and it was found that in order to achieve good filter performance with the specific process conditions, an adequate process control system was required. This filter control ensured removal efficiencies of > 95% with influent concentrations up to 30 ㎎/l NO₃-N and strongly fluctuating influent flows. The full scale denitrification installation with a capacity of 3,600㎥/h, the first full scale installation of this type used for biological denitrification in Europe, was built in 1998 and started up in 1999. Since the start up, the filter performance is good and the nitrate removal efficiencies are higher than required.
Temperature-driven transition from a semiconductor to a topological insulator
Wiedmann, Steffen,Jost, Andreas,Thienel, Cornelius,Brü,ne, Christoph,Leubner, Philipp,Buhmann, Hartmut,Molenkamp, Laurens W.,Maan, J. C.,Zeitler, Uli American Physical Society 2015 Physical review. B, Condensed matter and materials Vol.91 No.20