http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Kajimoto, T.,Shigyo, N.,Sanami, T.,Iwamoto, Y.,Hagiwara, M.,Lee, H.S.,Soha, A.,Ramberg, E.,Coleman, R.,Jensen, D.,Leveling, A.,Mokhov, N.V.,Boehnlein, D.,Vaziri, K.,Sakamoto, Y.,Ishibashi, K.,Nakashim North-Holland Physics Pub 2014 Nuclear instruments & methods in physics research. Vol.337 No.-
The energy spectra of neutrons were measured by a time-of-flight method for 120GeV protons on thick graphite, aluminum, copper, and tungsten targets with an NE213 scintillator at the Fermilab Test Beam Facility. Neutron energy spectra were obtained between 25 and 3000MeV at emission angles of 30<SUP>o</SUP>, 45<SUP>o</SUP>, 120<SUP>o</SUP>, and 150<SUP>o</SUP>. The spectra were parameterized as neutron emissions from three moving sources and then compared with theoretical spectra calculated by PHITS and FLUKA codes. The yields of the theoretical spectra were substantially underestimated compared with the yields of measured spectra. The integrated neutron yields from 25 to 3000MeV calculated with PHITS code were 16-36% of the experimental yields and those calculated with FLUKA code were 26-57% of the experimental yields for all targets and emission angles.
Argunova, Tatiana S.,Gutkin, Mikhail Yu.,Kazarova, O.P.,Mokhov, E.N.,Nagalyuk, Sergey S.,Je, Jung H. Trans Tech Publications, Ltd. 2015 Materials science forum Vol.821 No.-
<P>We report on the growth method and the structural characterization of freestanding AlN crystals. An AlN layer is grown on a gradually decomposing SiC substrate yielding a freestanding crack free 2H single crystal with dislocation density 5×10<SUP>4</SUP>cm<SUP>-2</SUP>and without grain boundaries as confirmed by synchrotron radiation phase contrast imaging and topography data. Wafers of 600-1000 μm thick and up to 15 mm in diameter are obtained. The thermal stress distribution in a conventional AlN/SiC structure is discussed. Theoretical estimates show that cracking of AlN layers is a natural result of their growth on undecomposed SiC substrates.</P>
Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays
Argunova, T. S.,Gutkin, M. Y.,Shcherbachev, K. D.,Je, J. H.,Lim, J. H.,Kazarova, O. P.,Mokhov, E. N. Springer Science + Business Media 2017 JOURNAL OF MATERIALS SCIENCE - Vol.52 No.8
<P>Bulk AlN crystals grown by sublimation on SiC substrates exhibit relatively high dislocation densities. The kind of defect formation at early growth stages influences the structural quality of the grown crystals. In this work, the dislocation distribution near to the interface is understood through investigation of thin (<= 1.5 mm) continuous (non-cracked) freestanding crystals obtained in one process with the evaporation of the substrates. TheAlN specimens were characterized using synchrotron radiation imaging techniques. We revealed by triple-axis X-ray diffraction study that, near to the former interface, randomly distributed dislocations configured to form boundaries between similar to 0.02 degrees misoriented sub-grains (from [0001] direction). Threading dislocation structure similar to that in epitaxial GaN films was not detected. To explain these observations, a theoretical model of misfit stress relaxation near the interface is suggested.</P>