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Enhancement of Thermoelectric Properties in Cold Pressed Nickel Doped Bismuth Sulfide Compounds
Fitriani Fitriani,Suhana Mohd Said,Shaifulazuar Rozali,Mohd Faiz Mohd Salleh,Mohd Faizul Mohd Sabri,Duc Long Bui,Tadachika Nakayama,Ovik Raihan,Megat Muhammad Ikhsan Megat Hasnan,Mohamed Bashir Ali Ba 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.6
Nanostructured Ni doped Bi 2 S 3 (Bi 2−x Ni x S 3 , 0 ≤ x ≤ 0.07) is explored as a candidate for telluride free thermoelectric material,through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with asintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introductionof the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2)introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of Bi 2 S 3 was decreasedby adding Ni atoms, which shows a minimum value of 2.35 × 10 −3 Ω m at 300 °C for Bi 1.99 Ni 0.01 S 3 sample. The presenceof porous structures gives a signifi cant eff ect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared toa high density Bi 2 S 3 . The thermal conductivity of Bi 2−x Ni x S 3 ranges from 0.31 to 0.52 W/m K in the temperature range of27 °C (RT) to 300 °C with the lowest κ values of Bi 2 S 3 compared to the previous works. A maximum ZT value of 0.13 at300 °C was achieved for Bi 1.99 Ni 0.01 S 3 sample, which is about 2.6 times higher than (0.05) of Bi 2 S 3 sample. This work showan optimization pathway to improve thermoelectric performance of Bi 2 S 3 through Ni doping and introduction of porosity.