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Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application
Wang Ting,Mo Guankong,Zhao Hongli,Yao Juan,Zou Zhuoliang,Fu Yuechun,Shen Xiaoming,He Huan 대한전기학회 2022 Journal of Electrical Engineering & Technology Vol.17 No.2
Amorphous InGaN fi lms were deposited on p-Si(100) substrates using a self-refi ted pulsed laser deposition system with double laser light paths and two-component target. The eff ects of laser energy on the microstructure, electrical and photovoltaic performances of InGaN fi lms as well as n-InGaN/p-Si heterojunction solar cells were investigated. The results show that all the fi lms are rich in Ga and poor in In, and the (In + Ga)/N atomic ratios are greater than 1. As the laser energy increases, In composition increases gradually and reaches to a maximum of 4.6 at.%. The PL spectra indicates that the band gap of the fi lms decrease with the increase of laser energy. Meanwhile, the resistivity of InGaN fi lm is decreased in two orders of magnitude due to the increasing of carrier concentration. Under the illumination of AM 1.5G solar simulator, the maximum power conversion effi ciency of amorphous n-InGaN/p-Si heterojunction solar cells is 0.73% with an open circuit voltage of 2.41 V and short current density of 0.69 mA/cm 2 at the laser energy of 175 mJ/pulse