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- 저자 : Michelle Y. Simmons (검색결과 2 건)
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Atomistic modeling of metallic nanowires in silicon.
Ryu, Hoon,Lee, Sunhee,Weber, Bent,Mahapatra, Suddhasatta,Hollenberg, Lloyd C L,Simmons, Michelle Y,Klimeck, Gerhard RSC Pub 2013 Nanoscale Vol.5 No.18
<P>Scanning tunneling microscope (STM) lithography has recently demonstrated the ultimate in device scaling with buried, conducting nanowires just a few atoms wide and the realization of single atom transistors, where a single P atom has been placed inside a transistor architecture with atomic precision accuracy. Despite the dimensions of the critical parts of these devices being defined by a small number of P atoms, the device electronic properties are influenced by the surrounding 10(4) to 10(6) Si atoms. Such effects are hard to capture with most modeling approaches, and prior to this work no theory existed that could explore the realistic size of the complete device in which both dopant disorder and placement are important. This work presents a comprehensive study of the electronic and transport properties of ultra-thin (<10 nm wide) monolayer highly P δ-doped Si (Si:P) nanowires in a fully atomistic self-consistent tight-binding approach. This atomistic approach covering large device volumes allows for a systematic study of disorder on the physical properties of the nanowires. Excellent quantitative agreement is observed with recent resistance measurements of STM-patterned nanowires [Weber et al., Science, 2012, 335, 64], confirming the presence of metallic behavior at the scaling limit. At high doping densities the channel resistance is shown to be insensitive to the exact channel dopant placement highlighting their future use as metallic interconnects. This work presents the first theoretical study of Si:P nanowires that are realistically extended and disordered, providing a strong theoretical foundation for the design and understanding of atomic-scale electronics.</P>
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Jing-Han Chen,Chi-Te Liang,Chun-Feng Huang,Da-Ren Hang,David A. Ritchie,J. C. Hsiao,Jyun-Ying Lin,Michelle Y. Simmons,Ming-Gu Lin,S. H. Lo,Tsai-Yu Huang 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
By applying a magnetic field perpendicular to GaAs/AlGaAs two-dimensional electron systems (2DESs), we study the low-field Landau quantization when the thermal damping is reduced with decreasing temperature. Magneto-oscillations following the Shubnikov-de Haas (SdH) formula are observed even when their amplitudes are so large that the deviation to such a formula is expected. Our experimental results show the importance of the positive magneto-resistance to the extension of the SdH formula under the damping induced by the disorder.
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