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Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films
José P.B. Silva,Koppole C. Sekhar,Sofia A.S. Rodrigues,Anatoli Khodorov,Javier Martín-Sanchez,Mário Pereira,Maria J.M. Gomes 한국물리학회 2012 Current Applied Physics Vol.12 No.4
The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films has been studied. The structural and morphological analysis revealed that the films had a well crystallized perovskite phase and grain size of about 30e40 nm. A well saturated PeE hysteresis loop was observed with a remnant polarization (Pr)z4.8 mC/cm2 and a coercive fieldz100 kV/cm at a frequency of 1 kHz. The Pr has been found to be decreased only 4.3% after passing 8.0 × 108 cycles. The analysis of switching response with nucleation limited switching model reveals that characteristic switching time (t0) variance is due to the random distribution of the local electric fields. The peak value of polarization current and t0 exhibits exponential dependence on reciprocal of pulse amplitude. The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films has been studied. The structural and morphological analysis revealed that the films had a well crystallized perovskite phase and grain size of about 30e40 nm. A well saturated PeE hysteresis loop was observed with a remnant polarization (Pr)z4.8 mC/cm2 and a coercive fieldz100 kV/cm at a frequency of 1 kHz. The Pr has been found to be decreased only 4.3% after passing 8.0 × 108 cycles. The analysis of switching response with nucleation limited switching model reveals that characteristic switching time (t0) variance is due to the random distribution of the local electric fields. The peak value of polarization current and t0 exhibits exponential dependence on reciprocal of pulse amplitude.