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아말 무하마드(Amal, M. Ikhlasul),힐미 무함마드(Alfaruqy, M. Hilmy),장윤정(Jang, Yun-Jung),김규호(Kim, Kyoo Ho) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
Cu₂ZnSnSe₄ (CZTSe) is one of candidate to alternate Cu(In,Ga)Se₂ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.
장윤정(Jang, Yun-Jung),아말 무하마드(Amal, M. Ikhlasul),힐미 무함마드(Alfaruqy, M. Hilmy),김규호(Kim, Kyoo Ho) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
Cu2ZnSnSe4는 CIS 태양전지의 In 대체 물질계로 주목을 받고 있는 저가형 태양전지 재료로 장차 차세대 태양전지 재료로 응용이 기대되고 있다. 그러나 에너지 밴드갭이 0.9~1.1eV로 다소 낮아 태양전지 광흡수층 재료로 사용하기 위해서는 wide band gab화 처리가 필요하다. 본 연구에서는 CZTSe에 S를 첨가하여 에너지 밴드갭을 확장하고자 하며, S의 첨가가 CZTSe 박막의 특성에 미치는 영향에 대하여 조사하였다. 실험의 편의성을 도모하고자 펄스레이저 법을 사용하여 증착하였다. 박막 조성 제어에는 Cu, Zn, Sn, Se, S 분말을 볼밀로 분쇄, 혼합하여 균질 혼합상 프리커서를 제조하고 이를 Cold Isostatic Press(CIP) 성형하여 Source target을 사용하였다. Pulsed YAG-Laser를 사용하여 soda lime glass상에 증착하고 조성, 구조, 조직을 관찰하고 에너지 밴드갭, 광흡수계수, 면저항, 전하밀도 등 특성을 조사하였다.
Kyoo Ho Kim,Rachmat Adhi Wibowo,M.Hilmy Alfaruqi,Jong-Heon Ahn 한국표면공학회 2011 한국표면공학회지 Vol.44 No.5
Cu<sub>2</sub>ZnSnSe<sub>4</sub> thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized Cu<sub>2</sub>ZnSnSe<sub>4</sub> compound target. The film’s composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition, X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of Cu<sub>2</sub>ZnSnSe<sub>4</sub> thin films were above 10<SUP>4</SUP>cm<SUP>-1</SUP> with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as 10<SUP>-1</SUP>Ωcm and a carrier concentration in the order of 10<SUP>17</SUP>cm<SUP>-3</SUP>.