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Formation of Cu1-xGex Nanoplatelets Using LPCVD of Ge2Me6 or Ge2Me6/Et4Pb Mixture
V. Drinek,T. Křenek,M. Klementov'a,R. Fajgar,M. Pola,J. Savkov'a,R. Medlin,F. Novotný 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2015 NANO Vol.10 No.4
Unlike synthesis of nanowires (1D nano-objects) the synthesis of nanoplatelets (2D nano-objects) has not been performed frequently. Herein, we report on the synthesis of Cu–Ge based on nanoplatelets with a high surface-to-volume ratio prepared by low pressure chemical vapor deposition (LPCVD) of Ge2Me6 and a mixture of Ge2Me6/PbEt4. Nanostructured deposits are composed of Cu1-xGex nanoplatelets, Ge nanowires and Ge nanoparticles. The nanoplatelets, which have the lateral size up to several tens of micrometers and thickness of 100–400 nm, belong to the cubic α phase of Cu91Ge9 alloy (Ge admixture in cubic Cu) and hexagonal ζ phase of Cu85Ge15 alloy. Nanowires composed of cubic Ge have a diameter of about 30 nm and length of several tens of micrometers. Lead does not enter any of these phases due to Pb–Cu and Pb–Ge immiscibility; therefore, it was observed as separate nanoparticles.