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Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD
M. Shimizu,H. Niu,H. Fujisawa,K. Kita,M. Okaniwa 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
Low-temperature MOCVD of Pb(Zr,Ti)O3 (PZT) thin lms and Ir lms was achieved. Using seed layer method and appropriate source gas combination method, PZT thin lms were successfully grown at 390-445 C. Ir thin lms as electrodes were also prepared at 280-350 C. Combining low-temperature MOCVD of PZT thin lms as a ferroelectric layer and Ir as an electrode, PZT capacitors with Ir electrodes were prepared solely by MOCVD. Even when PZT was deposited at low temperatures, 395 C and 445 C, PZT capacitors showed good D-E hysteresis loops with 2Pr of 20.0 C/cm2 and 36.9 C/cm2, respectively.