http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
DC/DC 전력 컨버터의 전류모드 PWM 제어기의 방사선 영향
노영환(Young Hwan Lho),황의성(Eui Sung Hwang),노경수(Kyeoung Su Lho),푸파논(Phouphanonh),캄푸는(Khamphoungeun),한창운(Chang Won Han) 한국철도학회 2011 한국철도학회 학술발표대회논문집 Vol.2011 No.10
DC/DC switching power converters produce DC output voltages from different DC input sources. The converters can be used in regenerative braking of DC motors to return energy back in the supply resulting in energy savings for the systems containing frequent stops. The current mode DC/DC converter is composed of a PWM (pulse width modulation) controller a MOSFET and inductor etc. Pulse width modulation is applied to control and regulate the total output voltage. It is shown that the variation of threshold voltage at MOSFET and the offset voltage increase caused by radiation effects make the PWM pulse unstable. In the PWM operation the missing pulses the changes in pulse width and a change in the period of the output waveform are studied by simulation program with integrated circuit emphasis (SPICE) and experiments.
Implementation of Effective Wireless Power Transmission Circuit for Low Power System
Lho, Young Hwan Institute of Korean Electrical and Electronics Eng 2018 전기전자학회논문지 Vol.22 No.3
Wireless power transfer (WPT) is the technology that enables the power to transmit electromagnetic field to an electrical load without the use of wires. There are two kinds of magnetic resonant coupling and inductive coupling ways transmitting from the source to the output load. Compared with microwave method for energy transfer over a long distance, the magnetic resonance method has the advantages of reducing the barrier of electromagnetic wave and enhancing the efficiency of power transmission. In this paper, the wireless power transfer circuit having a resonant frequency of 13.45 MHz for the low power system is studied, and the hardware implementation is accomplished to measure the power transmission efficiency for the distance between the transmitter and the receiver.
Design of Main Body and Edge Termination of 100 V Class Super-junction Trench MOSFET
Lho, Young Hwan Institute of Korean Electrical and Electronics Eng 2018 전기전자학회논문지 Vol.22 No.3
For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.
A Feedback Circuit of Effective Wireless Power Transfer for Low Power System
Lho, Young Hwan Institute of Korean Electrical and Electronics Eng 2018 전기전자학회논문지 Vol.22 No.2
Wireless power transfer (WPT) is the technology that forces the power to transmit electromagnetic field to an electrical load through an air gap without interconnecting wires. This technology is widely used for the applications from low power smartphone to high power electric railroad. In this paper, the model of wireless power transfer circuit for the low power system is designed for a resonant frequency of 13.45 MHz. Also, a feedback WPT circuit to improve the power transfer efficiency is proposed and shown better performance than the original open WPT circuit, and the methodology for power efficiency improvement is studied as the coupling coefficient increases above 0.01, at which the split frequency is made.
A Study on Temperature Dependent Super-junction Power TMOSFET
Lho, Young Hwan 한국전기전자학회 2016 전기전자학회논문지 Vol.20 No.2
It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of 0.96mΩ·cm² under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of mΩ·cm² , which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.
A Methodology of Dual Gate MOSFET Dosimeter with Compensated Temperature Sensitivity
Lho, Young-Hwan Institute of Korean Electrical and Electronics Eng 2011 전기전자학회논문지 Vol.15 No.2
MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.
A Study on Mathematical Modeling and Parameter Optimization for Automatic Pipe Welding Process
Lho, Tae-Jung 동명정보대학교 1999 東明情報大學校論文集 Vol.2 No.-
An efficient finite difference model was adopted for calculating the three-dimensional transient temperature distribution in circumferential gas tungsten arc(GTA) welding of pipes. Its solution was obtained by employing the alternating direction implicit(ADI) finite difference method, in which a periodic boundary condition and a periodic cubic spline function were used. For calculating the weld pool surface profiles in full penetration circumferential welding of pipes, a generating equation was derived in the cylindrical coordinate and solved using a simple finite difference model with the ADI scheme. An efficient parameter optimization method is used to evaluate the optimal welding current for a required bead width when the welding velocity is given.
Design of Super-junction TMOSFET with Embedded Temperature Sensor
Lho, Young Hwan Institute of Korean Electrical and Electronics Eng 2015 전기전자학회논문지 Vol.19 No.2
Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.
A Study on the Design of a Pulse-Width Modulation DC/DC Power Converter
Lho, Young-Hwan The Korean Society for Aeronautical and Space Scie 2010 International Journal of Aeronautical and Space Sc Vol.11 No.3
DC/DC Switching power converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. A switching converter utilizes one or more energy storage elements such as capacitors, or transformers to efficiently transfer energy from the input to the output at periodic intervals. The fundamental boost converter studied here consists of a power metal-oxide semiconductor field effect transistor switch, an inductor, a capacitor, a diode, and a pulse-width modulation circuit with oscillator, amplifier, and comparator. A buck converter containing a switched-mode power supply is also studied. In this paper, the electrical characteristics of DC/DC power converters are simulated by simulation program with integrated circuit emphasis (SPICE). Furthermore, power efficiency was analyzed based on the specifications of each component.