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        SWR as Tool for Determination of the Surface Magnetic Anisotropy Energy Constant

        L. J. Maksymowicz,M. Lubecka,R. Jabloński 한국자기학회 1998 Journal of Magnetics Vol.3 No.4

        The low energy excitations of spin waves (SWR) in thin films can be used for determination of the surface anisotropy constant and the nonhomogeneities of magnetization in the close-to-surface layer. The dispersion relation in SWR is sensitive on the geometry of experiment. We report on temperature dependence of surface magnetic anisotropy energy constant in magnetic semiconductor thin films of CdCr_(2-2x)In_(2x)Se₄ at spin glass state. Samples were deposited by rf sputtering technique on Corning glass substrate in controlled temperature conditions. Coexistence of the infinite ferromagnetic network (IFN) and finite spin clusters (FSC) in spin glass state (SG) is know phenomena. Some behavior typical for long range magnetic ordering is expected in samples at SG state. The spin wave resonance experiment (microwave spectrometer at X-band) with excited surface modes was applied to describe the energy state of surface spins. We determined the surface magnetic anisotropy energy constant versus temperature using the surface inhomogeneities model of magnetic thin films. It was found that two components contribute to the surface magnetic anisotropy energy. One originates from the exchange interaction term due to the lack of translation symmetry for surface spin as well as from the stray field of the surface roughness. The second one comes from the demagnetizing field of close-to surface layer with grad M. Both term linearly decrease when temperature is increased from 5 to 123 K, but dominant contribution is from the first component.

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        Magnetic Semiconductors Thin Films - Unidirectional Anisotropy

        M. Lubecka,L. J. Maksymowicz,R. Szymczak,W. Powroźnik 한국자기학회 1999 Journal of Magnetics Vol.4 No.1

        Unidirectional magnetic anisotropy field (Hαn) was investigated for thin films of CdCr_(2-2X)In_(2X)Se₄ (0≤x≤0.2). This anisotropy originates from the microscopic anisotropic Dzyaloshinskii-Moriya (DM) interaction which arise from the spin-orbit scattering of the conduction electrons by the nonmagnetic impurities. This interaction maintains the remanent magnetization in the direction of the initial applied field. Then the single easy direction of the magnetization is parallel to the direction of the magnetic field. The anisotropy produced by field cooling is unidirectional i.e. the spins system keeps some memory of the cooling field direction. The chalcogenide spinel of CdCr_(2-2X)In_(2X)Se₄ belongs to the class of the magnetic semiconductors. The magnetic disordered state is obtained when ferromagnetic structure is diluted by In. Then we have the mixed phase characterised by coexistence the magnetic long range ordering (IFN-infinite ferromagnetic network) and the spin glass order (Fc-finite clusters). The total magnetic anisotropy energy depends on the state of magnetic ordering. In our study we concentrated on the magnetic state with reentrant transition and spin glass state. The polycrystalline CdCr_(2-2X)In_(2X)Se₄ thin films were obtained by rf sputtering technique. We applied the ferromagnetic resonance (FMR) and M-H loop techniques for determining the temperature composition dependencies of Hαn. From the experimental data, we have found that Hαn decreases almost linearly when temperature is increased and in the low temperature is about three times bigger at SG state with comparison to the state with REE.

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