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Nonvolatile Memory Characteristics of Double-Stacked Si Nanocluster Floating Gate Transistor
Eunkyeom Kim,Kyongmin Kim,Daeho Son,Jeongho Kim,Kyungsu Lee,Sunghwan Won,Junghyun Sok,Wan-Shick Hong,Kyoungwan Park 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.1
We have studied nonvolatile memory properties of MOSFETs with double-stacked Si nanoclusters in the oxide-gate stacks. We formed Si nanoclusters of a uniform size distribution on a 5 nm-thick tunneling oxide layer, followed by a 10 nm-thick intermediate oxide and a second layer of Si nanoclusters by using LPCVD system. We then investigated the memory characteristics of the MOSFET and observed that the charge retention time of a double-stacked Si nanocluster MOSFET was longer than that of a single-layer device. We also found that the double-stacked Si nanocluster MOSFET is suitable for use as a dual-bit memory.
Kyongmin Kim,Eunkyeom Kim,Youngill Kim,Jung Hyun Sok,Kyoungwan Park 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.69 No.12
Bipolar resistive switching in ZnO/SiOx bi-layer and ZnO/SiOx/ZnO tri-layer structures was investigated for nonvolatile memory applications. ZnO thin films were grown using the radiofrequency magnetron sputtering technique at room temperature. SiOx films were grown using plasma-enhanced chemical-vapor deposition at 200 C. Multiple high-resistance states were observed during the set process. The high/low resistance state ratio was 10 during 100 on/off cycles. The tri-layer memory device exhibited better endurance properties than the bi-layer device. Because an asymmetric conducting filament has a weak point for charge conduction at the oxide interfaces, we attributed the good endurance property to the reproducible formation/rupture of “micro”-conducting filaments. Moreover, the dynamics of the oxygen ions in the SiOx layer plays an important role in resistive switching.