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Ga-WonLee,Jae-HeeLee,Young-MiKim,Won-ChangLee,Hyung-KiKim,Koung-DongYou,Chan-KwangPark 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
We have studied the effect on the gate oxide quality and the MOSFET behavior of eld oxide edges in a shallow trench isolation (STI) structure. We found that a buildup of positive charges was one of the reasons for the oxide degradation caused at the active-eld edge where a kink was formed. In the MOSFET characteristics, the inverse narrow width eect (INWE) was enhanced in NMOSFET's, and the narrow width eect (NWE) was enhanced in PMOSFET's. To improve the gate oxide integrity, after gate formation, we deposited an organic low-k insulator, called SiLK as an interlayer dielectric, followed by low-temperature annealing. SiLK seemed to cure the gate oxide and to prevent the build-up positive charge at the active-field edge. Although SiLK application brings reliability concerns, the results are still acceptable.