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Effect of Hydrogen in the Gate Insulator on the Bottom Gate Oxide TFT
KoPark, Sang-Hee,Ryu, Min-Ki,Yang, Shin-Hyuk,Yoon, Sung-Min,Hwang, Chi-Sun The Korean Infomation Display Society 2010 Journal of information display Vol.11 No.3
The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in $V_{th}$ instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.
A Protective Layer on the Active Layer of Al-Zn-Sn-O Thin-Film Transistors for Transparent AMOLEDs
Cho, Doo-Hee,KoPark, Sang-Hee,Yang, Shin-Hyuk,Byun, Chun-Won,Cho, Kyoung-Ik,Ryu, Min-Ki,Chung, Sung-Mook,Cheong, Woo-Seok,Yoon, Sung-Min,Hwang, Chi-Sun The Korean Infomation Display Society 2009 Journal of information display Vol.10 No.4
Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.
황치선,박상희,조경익,Hwang, C.S.,KoPark, S.H.,Cho, K.I. 한국전자통신연구원 2010 전자통신동향분석 Vol.25 No.5
정보 디스플레이는 기술의 발전에 따라 새로운 양상으로 발전하고 있다. 그 중에서 투명디스플레이는 정보를 배경과 같이 보여줄 수 있는 독특한 장점 때문에 주목을 받아왔지만 기술적인 한계로 대중화되지 못했다. 최근에는 AMOLED의 개발에 따라 투명디스플레이가 투명 AMOLED의 형태로 대중화될 기능성이 높아지고 있다. 투명 AMOLED는 AMOLED의 개발에 따라 기술적인 발전이 이루어질 것으로 전망되지만 투명 AMOLED가 가지는 투과도 개선, 시인성 확보 등 여러 기술적인 과제들을 해결하기 위해서는 별도의 기술개발이 필요하다. 이러한 기술개발을 통해 투명디스플레이가 대중화되면 증강현실 등의 콘텐츠와 결합하여 사용자에게 새로운 인터페이스를 제공해 줄 것으로 기대된다.
Song, H.-W.,Han, W.S.,Kim, J.-H.,Kwon, O.-K.,Ju, Y.-G.,Lee, J.-H.,KoPark, S.-H.,Kang, S.-G. IEE 2004 Electronics letters Vol.40 No.14
A a 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al<SUB>2</SUB>O<SUB>3</SUB>/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.