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Effect of Hydrothermal Pretreatment for Enhanced Biogas Production Using Micro-algal Biomass
Kwanyong Lee,Daegi Kim,Ki Young Park,Hyundong Lee,Chorong Kim 보안공학연구지원센터 2016 International Journal of Bio-Science and Bio-Techn Vol.8 No.4
The filamentous algal biomass, Hydrodictyon reticulatum (H. reticuatum) was used to evaluate the biogas production after hydrothermal pretreatment in batch anaerobic digestion. The effect of hydrothermal pretreatment at range of 50 ~ 280 oC was tested with filamentous algal biomass. The solubilization by pretreatment showed a higher degree of disintegrated filamentous algal biomass and the soluble COD was increased 12.8 fold than untreated sample at 280 oC. Solubilization due to hydrothermal pretreatment increased the specific biogas production and volatile solids reduction rates. Using the hydrothermal treatment approach, the specific methane production were 161.8, 169.1, 178.4, 191.7, 274.9, 285.2 and 364.4 mL/g-VS of the pretreated at raw, 50, 100, 120, 180, 230, and 280 oC, respectively. The volatile solids reduction was greater with increased temperature applied, and the degradation increased 69.7% at 280 oC from 45.8 % VS reduction of raw filamentous algal biomass.
김정오,이관용 서울대학교 어학연구소 1984 語學硏究 Vol.20 No.3
Kim, Rhee and Cho (1984) found that the prime word pattern-masked at a 50% identification threshold facilitates lexical decision of the semantically related probe word. An experiment was run to test whether this result can be replicated at a 30% identification threshold. In order to control any substantial differences among subjects regarding associative relation between the prime and probe words, half of the subjects were asked to relearn the associative relations between words while the remaining half were given free recall learning of the probe words. Then, subjects were given a lexical decision task in which the prime was presented with or without pattern mask at the 30% identification threshold. The present experiment obtained a 30-msec associative facilitation effect, confirming the results reported by Kim et al. Several hypotheses were examined to explain these results: the frequency hypothesis, the number of meaning hypothesis and the sophisticated guessing model. All of these explanations were found unsatisfactory and thus a new model termed cyclic information processing was proposed to explain the associative facilitation effect at 30-50% identification thresholds and other related findings. Discussion was made on the relationship between awareness and the associative facilitation effect and on two types of visual information processing in word perception.
N-doped double-walled carbon nanotubes synthesized by chemical vapor deposition
Kim, Shin Young,Lee, Jinyoung,Na, Chan Woong,Park, Jeunghee,Seo, Kwanyong,Kim, Bongsoo Elsevier 2005 Chemical physics letters Vol.413 No.4
<P><B>Abstract</B></P><P>High-purity N-doped double-walled carbon nanotubes (DWNTs) were synthesized by chemical vapor deposition, and investigated by synchrotron X-ray photoelectron spectroscopy (XPS). As the photon energy increases, the N content increases up to 3at.%, indicating that the inner wall contains the higher N content than the outer wall. The graphite-like and pyridine-like N structures exist as about 1:1 ratio. The self-consistent charge-density-functional-based tight-binding calculation shows that the N-doping of the inner wall yields the more stable DWNT than that of the outer wall, which supports the XPS result.</P>
A Finite Element Model for Bipolar Resistive Random Access Memory
Kwanyong Kim,Kwangseok Lee,Keun-Ho Lee,Young-Kwan Park,Woo Young Choi 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.3
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.
A Finite Element Model for Bipolar Resistive Random Access Memory
Kim, Kwanyong,Lee, Kwangseok,Lee, Keun-Ho,Park, Young-Kwan,Choi, Woo Young The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.3
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.
Truncated Tetrahedron Seed Crystals Initiating Stereoaligned Growth of FeSi Nanowires
Kim, Si-in,Yoon, Hana,Seo, Kwanyong,Yoo, Youngdong,Lee, Sungyul,Kim, Bongsoo American Chemical Society 2012 ACS NANO Vol.6 No.10
<P>We have synthesized epitaxially grown freestanding FeSi nanowires (NWs) on an <I>m</I>-Al<SUB>2</SUB>O<SUB>3</SUB> substrate by using a catalyst-free chemical vapor transport method. FeSi NW growth is initiated from FeSi nanocrystals, formed on a substrate in a characteristic shape with a specific orientation. Cross-section TEM analysis of seed crystals reveals the crystallographic structure and hidden geometry of the seeds. Close correlation of geometrical shapes and orientations of the observed nanocrystals with those of as-grown NWs indicates that directional growth of NWs is initiated from the epitaxially formed seed crystals. The diameter of NWs can be controlled by adjusting the composition of Si in a Si/C mixture. The epitaxial growth method for FeSi NWs <I>via</I> seed crystals could be employed to heteroepitaxial growth of other compound NWs.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2012/ancac3.2012.6.issue-10/nn302141w/production/images/medium/nn-2012-02141w_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn302141w'>ACS Electronic Supporting Info</A></P>
18.4%-Efficient Heterojunction Si Solar Cells Using Optimized ITO/Top Electrode
Kim, Namwoo,Um, Han-Don,Choi, Inwoo,Kim, Ka-Hyun,Seo, Kwanyong American Chemical Society 2016 ACS APPLIED MATERIALS & INTERFACES Vol.8 No.18
<P>We optimize the thickness of a transparent conducting oxide (TCO) layer, and apply a microscale mesh pattern metal electrode for high-efficiency a-Si/c-Si heterojunction solar cells. A solar cell equipped with the proposed microgrid metal electrode demonstrates a high short-circuit current density (J(sc)) of 40.1 mA/cm(2), and achieves a high efficiency of 18.4% with an open-circuit voltage (V-OC) of 618 mV and a fill factor (FF) of 74.1% as result of the shortened carrier path length and the decreased electrode area of the microgrid metal electrode. Furthermore, by optimizing the process sequence for electrode formation, we are able to effectively restore the reduction in V-OC that occurs during the microgrid metal electrode formation process. This work is expected to become a fundamental study that can effectively improve current loss in a-Si/c-Si heterojunction solar cells through the optimization of transparent and metal electrodes.</P>