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On the Handover Performance of a Tri-threshold Bandwidth Reservation CAC Scheme
Hoi Yan Tung,Kim Fung Tsang,Lap To Lee,Ka Lun Lam,Yu Ting Sun,Shiu Keung Ronald Kwan,Sammy Chan 한국전자통신연구원 2007 ETRI Journal Vol.29 No.1
A dynamic tri-threshold call admission control scheme has been developed. This scheme supports voice, data, and multimedia services and it complies with the universal mobile telecommunications system. The performance of the proposed scheme is evaluated under varying handover rates. The QoS performance–including channel utilization, call dropping probability, and blocking probability–is investigated. The performance of the developed scheme is found to be encouraging.
산화알루미늄 박막의 두께 및 열처리 온도에 따른 Al<sub>2</sub>O<sub>3</sub>/GaN MIS 구조의 전기적 특성 변화
곽노원,이우석,김가람,김현준,김광호,Kwak, No-Won,Lee, Woo-Seok,Kim, Ka-Lam,Kim, Hyun-Jun,Kim, Kwang-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.6
We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.
산화알루미늄 박막을 이용한 GaN MIS 구조의 제작 및 전기적 특성
윤형선,정상현,곽노원,김가람,이우석,김광호,서주옥,Yun, Hyeong-Seon,Jeong, Sang-Hyun,Kwak, No-Won,Kim, Ka-Lam,Lee, Woo-Seok,Kim, Kwang-Ho,Seo, Ju-Ok 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.