http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Surface-concentrated light and efficient carrier collection in microhole-patterned Si solar cells.
Kim, Joondong,Lee, Eunsongyi,Ju, Minkyu,Kim, Hyunyub,Yi, Junsin,Moon, Sang-Jin,Hyun, Moon Seop,Kim, Dong-Wook Optical Society of America 2013 Optics express Vol.21 No.4
<P>We investigate photovoltaic characteristics of crystalline Si solar cells with microhole-patterned surface. We compare patterned samples with different hole-widths and periods with a planar counterpart. From the finite-difference time-domain simulation, the patterned and planar samples are expected to have similar short circuit current density, J(sc) (difference: 1.2%). In contrast, the difference in the measured J(sc) is as large as 12.6%. The simulated optical field patterns reveal that the sample with more significantly concentrated light near the surface has higher quantum efficiency due to more efficient carrier collection. We report the highest efficiency of 15.6% among the hole-patterned solar cells.</P>
Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells
Kim, Hong-Sik,Patel, Malkeshkumar,Park, Hyeong-Ho,Ray, Abhijit,Jeong, Chaehwan,Kim, Joondong American Chemical Society 2016 ACS APPLIED MATERIALS & INTERFACES Vol.8 No.13
<P>Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 degrees C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.</P>
Cu<sub>4</sub>O<sub>3</sub>-based all metal oxides for transparent photodetectors
Kim, Hong-Sik,Kumar, Melvin David,Park, Wang-Hee,Patel, Malkeshkumar,Kim, Joondong Elsevier 2017 Sensors and actuators. A, Physical Vol.253 No.-
<P><B>Abstract</B></P> <P>All-oxide photodetectors based on Cu<SUB>4</SUB>O<SUB>3</SUB> were fabricated using DC and RF magnetron sputtering. A quality paramelaconite Cu<SUB>4</SUB>O<SUB>3</SUB> was formed by using large-scale available sputtering method and identified by X-ray diffraction. In order to establish a transparent junction, p-type Cu<SUB>4</SUB>O<SUB>3</SUB> was deposited onto an n-type ZnO. The indium-tin-oxide (ITO) layer was served as an electron transporting layer. The general device has a structure of Cu<SUB>4</SUB>O<SUB>3</SUB>/ZnO/ITO to show overall high-transmittance for broad wavelengths with a peak transmittance over 72%. To enhance the photodetector performances, a functional NiO layer was applied as a hole transporting layer, which actively controls the carrier movements, resulting in a quick photoresponse of 33ms. We demonstrated the paramelaconite Cu<SUB>4</SUB>O<SUB>3</SUB> as a transparent entity and provide the route for effective designs for transparent photoelectric applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Cu<SUB>4</SUB>O<SUB>3</SUB>-based all metal oxide transparent photodetectors were realized. </LI> <LI> Cu<SUB>4</SUB>O<SUB>3</SUB>/ZnO/ITO transparent device has high transmittances. </LI> <LI> NiO layer was functionally applied to improve the photoresponse. </LI> <LI> A route for transparent photoelectric devices was suggested and demonstrated. </LI> </UL> </P>