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Inkjet-Printing-Based Soft-Etching Technique for High-Speed Polymer Ambipolar Integrated Circuits
Khim, Dongyoon,Baeg, Kang-Jun,Kang, Minji,Lee, Seung-Hoon,Kim, Nam-Koo,Kim, Jihong,Lee, Geon-Woong,Liu, Chuan,Kim, Dong-Yu,Noh, Yong-Young American Chemical Society 2013 ACS APPLIED MATERIALS & INTERFACES Vol.5 No.23
Khim, Dongyoon,Baeg, Kang-Jun,Kim, Juhwan,Kang, Minji,Lee, Seung-Hoon,Chen, Zhihua,Facchetti, Antonio,Kim, Dong-Yu,Noh, Yong-Young American Chemical Society 2013 ACS APPLIED MATERIALS & INTERFACES Vol.5 No.21
<P>We report the fabrication of high-performance, printed, <I>n</I>-channel organic field-effect transistors (OFETs) based on an <I>N</I>,<I>N</I>-dialkyl-substituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) derivative, PDI-RCN2, optimized by the solvent-vapor annealing (SVA) process. We performed a systematic study on the influence of solubility and the chemical structure of a solvent used for the SVA process on the ordering and orientation of PDI-RCN2 molecules in the thin film. The PDI-RCN2 film showed improved crystallinity under vapor annealing with the aliphatic 1,2-dichloroethane (DCE) as a marginal solvent. The <I>n</I>-type OFETs with DCE-vapor-annealed PDI-RCN2 show highly improved charge-carrier mobility of ∼0.5 cm<SUP>2</SUP> V<SUP>–1</SUP> s<SUP>–1</SUP> and higher stability under gate bias stress than the pristine OFETs. This large performance improvement was mainly attributed to increased crystallinity of the semiconductor thin film, enhancing π–π stacking. We also introduced a new method to pattern crystallinity of a certain region in the semiconducting film by selective exposure to the solvent vapor using a shadow mask. The crystal-patterned PDI-RCN2 OFETs exhibit decreased off-currents by ∼10× and improved gate bias stability by minimizing crosstalk, reducing leakage current between devices, and reducing the density of charge trap states of the organic semiconductor.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2013/aamick.2013.5.issue-21/am4029075/production/images/medium/am-2013-029075_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am4029075'>ACS Electronic Supporting Info</A></P>
Khim, Dongyoon,Lee, Woo-Hyung,Baeg, Kang-Jun,Kim, Dong-Yu,Kang, In-Nam,Noh, Yong-Young The Royal Society of Chemistry 2012 Journal of materials chemistry Vol.22 No.25
<P>We report the use of two polyselenophene-based conjugated polymers, poly(3,3′′-didodecyl-2,2′:5,2′′-terselenophene) (<B>P3Se</B>) and poly(3,3′′,3′′′,3′′′′-tetradodecyl-2,5′:2′,2′′:5′′,2′′′-pentaselenophene) (<B>P5Se</B>), as an active layer of printed p-channel organic field-effect transistors (OFETs). Top-gate/bottom-contact (TG/BC) <B>P5Se</B> OFETs showed a high-saturation hole mobility of up to ∼0.1 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> and a high on/off ratio of ∼10<SUP>5</SUP> with no hysteresis. In addition, polyselenophene-based OFETs exhibited a much better bias and ambient stability when compared with poly(3-hexylthiophene)-based OFETs. The excellent air stability of those polyselenophenes enables the realization of complementary metal-oxide semiconductor (CMOS) inverters <I>via</I> extended periods of ink-jetting under ambient conditions. CMOS inverters were demonstrated using p-[<B>P5Se</B>] and n-channel [poly{[<I>N</I>,<I>N</I>′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-<I>s</I>,6-diyl]-<I>alt</I>-5,5′-(2,2′-dithiophene)}] ([P(NDI2OD-T2)], Polyera ActivInk N2200/OFETs) by inkjet printing of conjugated polymers. Printed CMOS inverters exhibited a stable voltage transfer characteristic with negligible hysteresis, a DC voltage gain of ∼10, and a power consumption of ∼0.025 mW at <I>V</I><SUB>DD</SUB> = −60 V.</P> <P>Graphic Abstract</P><P>We report the use of two polyselenophene-based conjugated polymers, poly(3,3′′-didodecyl-2,2′:5,2′′-terselenophene) (<B>P3Se</B>) and poly(3,3′′,3′′′,3′′′′-tetradodecyl-2,5′:2′,2′′:5′′,2′′′-pentaselenophene) (<B>P5Se</B>), as an active layer of printed p-channel organic field-effect transistors (OFETs). <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2jm16546e'> </P>
Khim, Dongyoon,Baeg, Kang-Jun,Kim, Juhwan,Yeo, Jun-Seok,Kang, Minji,Amegadzea, Paul S. K.,Kim, Mu-Gyeom,Cho, Joonhyuk,Lee, Jung Hun,Kim, Dong-Yu,Noh, Yong-Young The Royal Society of Chemistry 2012 Journal of materials chemistry Vol.22 No.33
<P>Here we report the effects of a Cs-salt based charge injection interlayer on the characteristics of top-gate/bottom-contact (TG/BC) ambipolar polymer OFETs with poly(thienylenevinylene-co-phthalimide)s functionalized at the imide nitrogen with dodecyl (PTVPhI-C12). P-channel dominant PTVPhI-C12 ambipolar OFETs showed both an improved electron injection and blocked hole injection properties by insertion of a thermally deposited thin CsF interlayer between Au source/drain electrodes and the organic semiconductor. X-ray and UV photoelectron spectroscopy results exhibited that the work-function of the Au electrode progressively changed from −4.5 eV to −3.9 eV and the Fermi levels of PTVPhI-C12 concomitantly moved towards the LUMO level of the conjugated polymer with an increase of CsF thickness from 0 nm to 1.5 nm, respectively. Both the shifting of Au work-function and the molecular doping of PTVPhI-C12 by insertion of CsF provide an order of magnitude improved n-channel properties in p-channel dominant ambipolar PTVPhI-C12 OFETs. In the end, the characteristics of the PTVPhI-C12 complementary inverter were improved (gain > 23) by a selective deposition and optimization of the CsF interlayer thickness on the n-channel region of ambipolar CMOS inverters.</P> <P>Graphic Abstract</P><P>Here we report the effects of a Cs-salt based charge injection interlayer on the characteristics of top-gate/bottom-contact ambipolar polymer OFETs. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2jm32721j'> </P>
Khim, Dongyoon,Han, Hyun,Baeg, Kang‐,Jun,Kim, Juhwan,Kwak, Sun‐,Woo,Kim, Dong‐,Yu,Noh, Yong‐,Young WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.31
<P><B>Large‐area polymer FET arrays and integrated circuits (ICs)</B> are successfully demonstrated via a simple wire‐bar–coating process. Both a highly crystalline conjugated polymer layer and very smooth insulating polymer layer are formed by a consecutive wire‐bar–coating process on a 4‐inch plastic substrate with a short processing time for application as the active and dielectric layers of OFET arrays and ICs.</P>
Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer
Khim, Dongyoon,Shin, Eul-Yong,Xu, Yong,Park, Won-Tae,Jin, Sung-Ho,Noh, Yong-Young American Chemical Society 2016 ACS APPLIED MATERIALS & INTERFACES Vol.8 No.27
<P>The threshold voltage and onset voltage for p-channel and n-channel regimes of solution-processed ambipolar organic transistors with top-gate/bottom-contact (TG/BC) geometry were effectively tuned by gate buffer layers in between the gate electrode and the dielectric. The work function of a pristine Al gate electrode (-4.1 eV) was modified by cesium carbonate and vanadium oxide to 2.1 and 5.1 eV, respectively, which could control the flat -band voltage, leading to a remarkable shift of transfer curves in both negative and positive gate voltage directions without any side effects. One important feature is that the mobility of transistors is not very sensitive to the gate buffer layer. This method is simple but useful for electronic devices where the threshold voltage should be precisely controlled, such as ambipolar circuits, memory devices, and light -emitting device applications.</P>
Kim, Jihong,Khim, Dongyoon,Kang, Rira,Lee, Seung-Hoon,Baeg, Kang-Jun,Kang, Minji,Noh, Yong-Young,Kim, Dong-Yu American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.11
<P>Here, we report the simultaneous attainment of efficient electron injection and enhanced stability under ambient conditions for top-gate/bottom-contact (TG/BC), n-type, organic field-effect transistors (OFETs) using water-soluble polyfluorene derivatives (WPFs). When inserting the WPF interlayers between a semiconductor and the BC Au electrodes, initially the ambipolar (6,6)-phenyl-C<SUB>61</SUB>butyric acid methyl ester (PCBM) OFETs were fully converted to unipolar charge transport characteristics that were exclusively n-type with significantly increased electron mobilities as high as 0.12 cm<SUP>2</SUP>/(V s) and a decreased threshold voltage. These improvements were mostly attributed to the interfacial dipoles of WPF layers that aligned to form a favorable energy band structure for efficient electron injection and to effectively block counter charge carriers. These were confirmed when values for the reduced work function of metal electrodes with WPFs and their correlated contact resistance were measured via the ultraviolet photoemission spectroscopy and the transmission-line method, respectively. Moreover, the WPF interlayers played an important role in air stability of PCBM OFETs that exhibited higher and appreciably enhanced by increasing the ethylene-oxide side chain lengths of WPFs, which presumably was due to the water/oxygen/ion capturing effects in the hydrophilic interlayers.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-11/am500466q/production/images/medium/am-2014-00466q_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am500466q'>ACS Electronic Supporting Info</A></P>
Kang, Minji,Khim, Dongyoon,Kim, Jihong,Lee, Hyeon Jun,Jo, Ji Young,Baeg, Kang-Jun,Kim, Dong-Yu Elsevier 2018 ORGANIC ELECTRONICS Vol.58 No.-
<P><B>Abstract</B></P> <P>Expandability of organic electronics has stimulated ongoing research for the development of a variety of flexible and/or large-area optoelectronic applications. Among these electronic devices, organic non-volatile memories are emerging as suitable components for solid-state data storage because of their low-cost fabrication, large storage capacity, light weight, and conformable mechanical properties. To fully integrate organic memories with wearable and flexible/stretchable electronic systems, it is important to develop a device in which the properties such as threshold voltage and operating regime are controllable. This leads to improvement in the adaptability of the device to peripheral circuitry and encourages the development of multi-functional organic electronic components. Here, we investigate the tunable electrical properties of charge-trap (electret) memory devices based on organic field-effect transistors, obtained by the doping of an ambipolar polymer semiconductor. The electret memory devices using the doped semiconductor showed a remarkable enhancement in the charge-storage capacity, an excellent charge retention time of more than 10<SUP>7</SUP> s, and four-fold increase in charge carrier mobility. The improved memory characteristics associated with the controllable molecular doping could pave the way for the development of next-generation memory devices that are compatible with flexible and printed electronic technology.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Electret memory devices using the p-doped PDVT-10 polymer semiconductor were fabricated. </LI> <LI> We demonstrated that the doping of organic semiconductor in the memories can modulate the efficiency of charge trapping. </LI> <LI> The devices showed a retention time of more than 10<SUP>7</SUP> s and four-fold increase in charge carrier mobility. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors
Kang-Jun Baeg,Dongyoon Khim,Juhwan Kim,Dong-Yu Kim,Si-Woo Sung,Byung-Do Yang,Yong-Young Noh IEEE 2013 IEEE electron device letters Vol.34 No.1
<P>High-performance inkjet-printed top-gate/bottom-contact organic field-effect transistors (OFETs) and complementary electronic circuitry are reported. Blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) dielectrics effectively reduce the operation voltage. At the optimized blend ratio of 7 : 3 wt.% for P(VDF-TrFE) and PMMA, both p- and n-type printed OFETs show well-balanced high field-effect mobility values (~ 0.5 cm<SUP>2</SUP>/V·s) and low threshold voltages ( ±5 V). The high-performance inverters and various digital logic gates such as nand, nor, or, and xor are demonstrated on flexible plastic substrates. The inverter shows a high gain (>; 25), an ideal inverting voltage near half of the supplied bias (1/2<I>VDD</I>), and a high noise immunity (up to 79 % of 1/2<I>VDD</I>).</P>