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- 저자 : Kenneth Teo (검색결과 1 건)
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Enhanced Cold Wall CVD Reactor Growth of Horizontally Aligned Single-Walled Carbon Nanotubes
Wei Mu,곽은혜,Bingan Chen,Shirong Huang,Michael Edwards,Yifeng Fu,Kjell Jeppson,Kenneth Teo,정구환,Johan Liu 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.3
Synthesisof horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) bychemical vapor deposition (CVD) directly on quartz seems very promising for thefabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesisof HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, coolingand growth periods, but also prevents contamination of the chamber. However, sincemost synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this wellestablishedprocess to a cold-wall chamber becomes extremely crucial. Here, in orderto transfer the CVD growth technology from a hot-wall to a cold-wall chamber, asystematic investigation has been conducted to determine the influence of processparameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVDchamber was upgraded with a top heater to complement the bottom substrate heater;the first reason to maintain a more uniform temperature profile during HA-SWCNTsgrowth, and the second reason to preheat the precursor gas flow before projecting itonto the catalyst. Our results show that the addition of a top heater had a significanteffect on the synthesis. Characterization of the CNTs shows that the average density ofHA-SWCNTs is around 1 - 2 tubes/μm with high growth quality as shown by Ramananalysis.
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