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Large superconformal near-horizons from M-theory
Kelekci, Ö,.,Lozano, Y.,Montero, J.,Ó,Colgá,in, E.,Park, M. American Physical Society 2016 Physical review. D Vol.93 No.8
<P>We report on a classification of supersymmetric solutions to 11D supergravity with SO(2, 2) x SO(3) isometry, which are AdS/CFT dual to 2D CFTs with N = (0, 4) supersymmetry. We recover the Maldacena, Strominger, Witten near-horizon with small superconformal symmetry and identify a class of AdS(3) x S-2 x S-2 x CY2 geometries with emergent large superconformal symmetry. This exhausts known compact geometries. Compactification of M-theory on CY2 results in a vacuum of 7D supergravity with large superconformal symmetry, providing a candidate near-horizon for an extremal black hole and a potential new setting to address microstates.</P>
Cystic fibrosis of pancreas and nephrotic syndrome: a rare association
Kelekci, Selvi,Karabel, Musemma,Ece, Aydin,Sen, Velat,Gunes, Ali,Yolbas, Ilyas,Sahin, Cahit The Korean Pediatric Society 2013 Clinical and Experimental Pediatrics (CEP) Vol.56 No.10
Cystic fibrosis (CF) is a genetic disease with autosomal recessive inheritance and is common in Caucasian people. The prevalence of this disease is between 1/2,000 and 1/3,500 live births, and the incidence varies between populations. Although the CF transmembrane conductance regulator gene is expressed in the kidneys, renal involvement is rare. With advances in the treatment of CF, life expectancy has increased, and some previously unobserved disease associations are now seen in patients with CF. It is important to follow patients with CF for possible abnormalities that may accompany CF. In this paper, we present two rare cases of CF accompanied by nephrotic syndrome.
Anomalous Nernst Effects of [CoSiB/Pt] Multilayer Films
O. Kelekci,H. N. Lee,T. W. Kim,H. Noh 한국자기학회 2013 Journal of Magnetics Vol.18 No.3
We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to 1/d¹.³, which can be conjectured from the expected temperature gradient along the sample from the heat equation.
O. Kelekci,P. Tasli,S.S. Cetin,M. Kasap,S. Ozcelik,E. Ozbay 한국물리학회 2012 Current Applied Physics Vol.12 No.6
We investigate the structural and electrical properties of AlxIn1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested AlxIn1-xN/AlN/GaN/Al0.04Ga0.96N heterostructures when compared to the standard AlxIn1exN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al0.04Ga0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the AlxIn1-xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible. We investigate the structural and electrical properties of AlxIn1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested AlxIn1-xN/AlN/GaN/Al0.04Ga0.96N heterostructures when compared to the standard AlxIn1exN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al0.04Ga0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the AlxIn1-xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible.
The Impact of Inflammatory and Infectious Diseases of Vulvar on Quality of Life
( Kıymet Handan Kelekci ),( Selcuk Ozyurt ),( Bulent Ozkan ),( Semsettin Karaca ),( Ali Karakuzu ),( Ilgul Bilgin ) 대한폐경학회 2016 대한폐경학회지 Vol.22 No.3
Objectives: This study aimed to evaluate the effects of vulvar dermatoses (VD) and vulvar infections (VE) on anxiety, depression scores, general, and dermatological quality of life (QOL) of women. Methods: We conducted a cross-sectional survey on patients diagnosed with VD and VE. All patients were assessed using a sociodemographic form, Skindex-29 scale, World Health Organization QOL (WHOQOL) BREF scale, Hamilton anxiety rating scale (HAM-A), Hamilton depression rating scale (HAM-D). Results: HAM-A score was significantly higher in the VD group than in the control group. Based on age groups, all subscales of Skindex-29 were found to be higher in women > 50 years. For women with severe pruritus, the symptom subscale was higher in patients with skin involvement and the function and emotion subscales were higher in patients with and emotion subscales were higher in patients with mucosal involvement. Conclusions: We found that VD was particularly significantly associated with decreased QOL. (J Menopausal Med 2016;22:131-138)
Iqbal, M.Z.,Kelekci, O.,Iqbal, M.W.,Eom, J. Pergamon Press ; Elsevier Science Ltd 2013 Carbon Vol.59 No.-
The defect formation mechanism in chemical vapor deposition grown single layer graphene devices has been investigated by increasing electron beam (e-beam) irradiation doses gradually up to 750e<SUP>-</SUP>/nm<SUP>2</SUP>. The evolution of D peaks in Raman spectra provides an evidence of strong lattice disorder due to e-beam irradiation. Particularly, the trajectory of D and G peak intensities ratio (I<SUB>D</SUB>/I<SUB>G</SUB>) suggests that the transformation of graphene from crystalline to the nanocrystalline and then towards amorphous form with increasing irradiation dose. The defect parameters were calculated by phenomenological model of amorphization trajectory for graphitic materials. The mobility decreasing gradually from ~1200 to ~80cm<SUP>2</SUP>/V s with gradual increase of irradiation dose, which implies the formation of localized states in e-beam irradiated graphene. The Dirac point is shifted towards negative gate voltage which indicates the n-doping in graphene with increasing e-beam irradiation dose.
Anisotropic Electronic Transport of Graphene on a Nano-Patterned Substrate
H. M. W. Khalil(칼릴 하피츠),O. Kelekci(켈렉시 오즈구르),H. Noha(노화용),Y. H. Xie(시에 야홍) 한국진공학회(ASCT) 2012 Applied Science and Convergence Technology Vol.21 No.5
주기적인 나노트랜치 패턴이 있는 기판 위에 놓인 CVD 그래핀의 전도특성을 측정하였다. 나노트랜치에 대해 평행한 방향과 수직한 방향 사이에 전도특성의 큰 비등방성을 발견하였다. 전기 전도의 방향이 나노트랜치에 수직한 경우, 약한 한곳모임의 특성에 있어서도 큰 차이점이 발견되었는데, 이는 퍼텐셜 변조에 의해 생겨나는 전하밀도의 비균일성에 의해 생겨나는 것으로 해석된다. We report on the measurements of electronic transport properties of CVD graphene placed on a pre-patterned substrate with periodic nano trenches. A strong anisotropy has been observed between the transport parallel and perpendicular to the trenches. Characteristically different weak localization corrections have been also observed when the transport was perpendicular to the trench, which is interpreted as due to a density inhomogeneity generated by the potential modulations.
Anisotropic Electronic Transport of Graphene on a Nano-Patterned Substrate
칼릴 하피츠,켈렉시 오즈구르,노화용,시에 야홍,Khalil, H.M.W.,Kelekci, O.,Noh, H.,Xie, Y.H. The Korean Vacuum Society 2012 Applied Science and Convergence Technology Vol.21 No.5
주기적인 나노트랜치 패턴이 있는 기판 위에 놓인 CVD 그래핀의 전도특성을 측정하였다. 나노트랜치에 대해 평행한 방향과 수직한 방향 사이에 전도특성의 큰 비등방성을 발견하였다. 전기 전도의 방향이 나노트랜치에 수직한 경우, 약한 한곳모임의 특성에 있어서도 큰 차이점이 발견되었는데, 이는 퍼텐셜 변조에 의해 생겨나는 전하밀도의 비균일성에 의해 생겨나는 것으로 해석된다. We report on the measurements of electronic transport properties of CVD graphene placed on a pre-patterned substrate with periodic nano trenches. A strong anisotropy has been observed between the transport parallel and perpendicular to the trenches. Characteristically different weak localization corrections have been also observed when the transport was perpendicular to the trench, which is interpreted as due to a density inhomogeneity generated by the potential modulations.