http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Kavoos Mirabbaszadeh (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
-
Mehdi Ahmadi,Kavoos Mirabbaszadeh,Mostafa Ketabchi 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.6
We investigated the effect of employing ZnO nanorods in an inverted polymer solar cell based on Poly(3-hexylthiophene) and Indene-C60 Bis-Adduct. Hydrothermal method was chosen to growth of vertically aligned ZnO nanorods on 30 nm thick ZnO seed layer. The samples were analyzed by x-ray diffraction (XRD),scanning electron microscopy (SEM), and electrical conductivity measurements. Indene-C60 Bis-Adduct, as new acceptor with higher-lying LUMO energy level than PCBM blended with P3HT. Efficient infiltration of polymer into interspaces between nanorod arrays concluded to improved performance of the device. Photovoltaic characteristic of inverted polymer solar cell with ZnO nanorods were compared with devices employed ZnO thin film. Inverted polymer solar cell based on Poly (3-hexylthiophene) and Indene-C60 Bis-Adduct hybridized with ZnO nanorods exhibited power conversion efficiency of 4.04% that was better than a device with ZnO thin film interlayer (3.80%).
-
Mehdi Ahmadi,Kavoos Mirabbaszadeh,Saeid Salari,Hamed Fatehy 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.5
An inverted structure of polymer solar cells based on Poly(3-hexylthiophene)(P3HT):[6-6] Phenyl-(6) butyric acid methyl ester (PCBM) with thin films of sol-gel derived Cesium doped ZnO (Cs:ZnO) was developed as an efficient cathode buffer layer. Doped and undoped thin films were deposited using a less studied method, doctor blade, which was compatible with Roll-2-Roll printing method. By comparing the effect of Cs:ZnO thin films with various dopant ratio on the performance of inverted polymer solar cells, 0.5% Cs doped ZnO was found as the most effective doping level among the selected doping ratios. Using 30 nm thickness of 0.5% Csn:ZnO thin film as an electron transport layer led to the average efficiency which was significantly higher than (9%) that of similar devices employing the same thickness of undoped ZnO film. Results showed that the devices fabricated with 1% and 2% cesium doped ZnO yielded lower power conversion efficiency, which could be due to the lower FF. Also, the influence of dopant incorporation on the optical transmittance and electrical conductivity of ZnO films was investigated.
-
Masood Mehrabian,Hossein Afarideh,Kavoos Mirabbaszadeh,Li Lianshan,Tang Zhiyong 한국광학회 2014 Current Optics and Photonics Vol.18 No.4
Improved power conversion efficiency of hybrid solar cells with ITO/ZnO seed layer/ZnO NRs/ZnS QDs/P3HT/PCBM/Ag structure was obtained by optimizing the growth period of ZnO nanorods (NRs). ZnO NRs were grown using a hydrothermal method on ZnO seed layers, while ZnS quantum dots (QDs) (average thickness about 24 nm) were fabricated on the ZnO NRs by the successive ionic layer adsorption and reaction (SILAR) technique. Morphology, crystalline structure and optical absorption of layers were analyzed by a scanning electron microscope (SEM), X-ray diffraction (XRD) and UV-Visible absorption spectra, respectively. The XRD results implied that ZnS QDs were in the cubic phase (sphalerite). Other experimental results showed that the maximum power conversion efficiency of 4.09% was obtained for a device based on ZnO NR10 under an illumination of one Sun (AM 1.5G, 100 mW/cm2).
-
Sol-Gel Processed GZO Thin Film from Low Concentration Solution and Investigating GZO/Cs2CO3 Bilayer
Saeid Salari,Mehdi Ahmadi,Kavoos Mirabbaszadeh 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.1
Highly transparent Gallium doped ZnO (GZO) thin films with different ratios of Gallium were synthesized by sol-gel process and dip coating technique. Concentration of the used solutions for dip coating was 0.09 M. Morphological investigations were done on GZO thin films with 0, 0.5, 1 and 2 at. % gallium content. Influences of doping ratio and post-annealing temperature on optical and electrical properties of the films were also studied. It was found that the film prepared from the solution containing 2 at. % Ga had improved structural properties, less electrical resistivity and biggest optical transmittance. The thickness dependence of the band gap of 2 at.% GZO thin films was also examined. Effect of Cs2CO3 nanolayer and ZnO thin film deposited on 2 at.% GZO thin film was studied. SEM images exhibited island features on the surface of GZO/Cs2CO3 bilayer.
DBpia
ScienceON연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
