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플라즈마 포커스를 이용한 크롬 산화물 박막 성장의 분위기 기체 압력 의존성 연구
정규호,이재갑,임현식,이전국,Jung, Kyoo-Ho,Lee, Jae-Kap,Im, Hyun-Sik,Karpinski, L.,Scholz, M.,Lee, Jeon-Kook 한국재료학회 2007 한국재료학회지 Vol.17 No.6
Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.