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1
A New Radiological Sign for Severe Angular Kyphosis: “The Baltalimani Sign”

Yunus Atici,Osman Emre Aycan,Muhammed Mert,Deniz Kargin,Akif Albayrak,Mehmet Bulent Balioglu 대한척추외과학회 2016 Asian Spine Journal Vol.10 No.6
Study Design: Retrospective diagnostic study. Purpose: To define a new radiological sign, “Baltalimani sign,” in severe angular kyphosis (SAK) and to report its relationship with the risk of neurological deficits and deformity severity. Overview of Literature: Baltalimani sign was previously undefined in the literature. Methods: We propose Baltalimani sign as the axial orientation of the vertebrae that are located above or below the apex of angular kyphosis on anteroposterior radiographs. Patients with SAK of various etiologies with kyphotic angles ≥90° were selected and evaluated for the presence of Baltalimani sign. Demographic data of the patients including age, gender, etiology, neurological status, local kyphosis angles, and the location of the kyphosis apex were recorded. Sensitivity, specificity, positive predictive value (PPV), and negative predictive values (NPV) of Baltalimani sign for the risk of the neurological deficits were evaluated by the IBM SPSS ver. 20.0. A p -values of <0.05 were considered statistically significant. Cohen’s kappa was used for analysis of interrater agreement. Results: The mean local kyphosis angle in all patients was 124.2° (range, 90°–169°), and 15 of 40 (37.5%) patients had neurological deficits. Baltalimani sign was seen in 13 of 15 patients with neurological deficits (p =0.001). Baltalimani sign showed a sensitivity and specificity PPV and NPV of 61.9%, 86.7%, 89.5%, and 68.8% for the risk of the neurological deficits in SAK patients, respectively. Cohen’s kappa value was moderate (κ=0.506). Conclusions: The detection of Baltalimani sign in SAK may indicate severity of deformity and the risk of neurological deficits.
2
The effects of flavanoid on the treatment of hepatopulmonary syndrome

Talha Atalay,Murat Cakir,Ahmet Tekin,Tevfik Kucukkartallar,Suleyman Kargin,Adil Kartal,Adnan Kaynak 대한외과학회 2013 Annals of Surgical Treatment and Research(ASRT) Vol.85 No.5
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Purpose: Hepatopulmonary syndrome is an arterial oxygenation disorder brought about by advanced liver failure and pulmonary vascular dilatations. The reason why hypoxia develops in hepatopulmonary syndrome depends on the broadening of perialveolar capillary veins. Our study aims to investigate the effects of Flavanoid on hepatopulmonary syndrome through its inhibition of nitric oxide. Methods: Three groups, each having 8 rats, were formed within the scope of our study. Group I (the control group) only received laparatomy, group II received choledoch ligation, and group III was administered Flavanoid (90% flavonoid diosmin, 10% flavonoid hesperidin) following choledoch ligation. The rats were administered Flavanoid at week two following choledoch ligation. The rats’ livers and lungs were examined histopathologically following a five-week follow-up and the perialveolar vein diameters were measured. Arterial blood gases and biochemical parameters were evaluated. Results: It was seen that fibrosis and oxidative damage in the liver with obstructive jaundice as well as hypoxia with pulmonary perialveolar vein sizes were significantly lower than the other group with cirrhosis formed through the administration of Flavanoid. Conclusion: We have concluded that Flavanoid administration might be useful in the treatment of hypoxia in hepatopulmonary syndrome and the delay of cirrhosis contraction.
3
Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

Polyakov, Alexander Y.,Smirnov, Nickolai B.,Cheong Hyun Roh,Cheol-Koo Hahn,Han-Su Cho,Kozhukhova, Elena A.,Govorkov, Anatolyi V.,Ryzhuk, Roman Valerievich,Kargin, Nikolay Ivanovich,In-Hwan Lee IEEE 2014 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol. No.
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Electrical properties of GaN films grown on Si by molecular beam epitaxy using various types of strain-relieving layers have been studied by means of Hall/van der Pauw measurements, capacitance-voltage profiling, admittance spectroscopy, and deep levels transient spectroscopy with electrical and optical injection. The electrical properties of all grown films were determined by relatively deep electron traps N1, N2, and N3 with aggregate concentration of ~1017 cm-3. Freezing out of these traps led to the films freezing out down to the depth corresponding to the nearest underlying heterointerface where a strong band bending caused a sharp nonuniformity of charge carriers concentration. For AlN or Al-rich AlGaN underlying films, this band bending could cause formation of hole sheet charge leading to apparent conductivity to appear p-type in Hall. Other deep traps detected in the grown films were N4 and N5 acceptors with levels near Ec - 0.6 eV, and hole traps H1 and H2 with levels near Ev + 0.9 eV. Possible consequences of the observed phenomena for designing the thick GaN stand-off films in power transistors are briefly discussed.