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Optimized Isotropy in Left-Handed Metamaterials
K. Matra,N. Wongkasem 대한전자공학회 2009 ITC-CSCC :International Technical Conference on Ci Vol.2009 No.7
Left-handed metamaterials designed using Cn group with optimized isotropy are proposed. The structures provide 2n and 6n excitation directions where the identical response is generated for two and three dimensional models. Circuit analysis is used to design the negative index of refraction, later verified by the effective material parameters. The result shows the negative index passband with low losses.
Development of Compact Microstrip Antennas using Metamaterials
C. Kamtongdee,N. Wongkasem,B. Charoen,K. Matra 대한전자공학회 2009 ITC-CSCC :International Technical Conference on Ci Vol.2009 No.7
A new design of compact 2.4 GHz microstrip antennas, where metamaterials are placed on structure substrate, is proposed. The newly designed microstrips provide an optimized patch area resulting into a substantial reduction in size compared to a typical microstrip patch designed at the same frequency of operation. It was found that the characteristics of the novel microstrip antennas with designed metamaterials placed on the substrate are comparable to the conventional patch antennas, while their gain and radiating efficiency are noticeably improved.
Jung, H.,Kim, W. H.,Oh, I. K.,Lee, C. W.,Lansalot-Matras, C.,Lee, S. J.,Myoung, J. M.,Lee, H. B.,Kim, H. Springer Science + Business Media 2016 JOURNAL OF MATERIALS SCIENCE - Vol.51 No.11
<P>The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)(2)](2) as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of similar to 4. In addition, the PE-ALD process of the SiO2 films exhibited well-saturated and almost linear growth characteristics of similar to 1.3 cycle(-1) without notable incubation cycles, producing pure SiO2 films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO2 film showed that PE-ALD SiO2 films had relatively lower leakage currents than PE-CVD SiO2 films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO2 films were further evaluated in the structures of In-Ga-Zn-O thin-film transistors, and they both showed good device performances in terms of high I (on) - I (off) ratios (> 10(8)) and low off-currents (< 10(-11) A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO2 showed better reliability against a negative V (th) shift than PE-CVD SiO2, which might also be understood from its smoother channel/insulator interface generation at the interface.</P>