RISS 검색 - 국내학술지논문

무료
기관 내 무료
유료

내보내기
내책장담기
한글로보기

정확도순

내림차순

내림차순

10개씩 출력

1
Enhanced performance of the OLED with plasma treated ITO and plasma polymerized thiophene buffer layer

Park, S.M.,Ebihara, K.,Ikegami, T.,Lee, B.J.,Lim, K.B.,Shin, P.K. Elsevier 2007 Current Applied Physics Vol.7 No.5
- 원문보기
In this work, indium-tin-oxide (ITO) electrode in organic light emitting device (OLED) was modified by using an O<SUB>2</SUB> plasma treatment and plasma polymerized thiophene buffer layers were inserted between ITO (anode) and organic layer in order to improve the hole injection efficiency. Furthermore, electron injection to cathode (Al) in the test OLED seemed to be improved due to introduction of quantum well in the cathode. The plasma-polymerized thiophene buffer layer on the O<SUB>2</SUB> plasma-treated transparent ITO electrode seemed to result in formation of a stable interface and consequently, reduction the hole mobility, which in turn caused enhanced recombination of hole and electron in the emitting layer. Compared with the test device without buffer layer, the turn-on voltage of the test device with the buffer layer was lowered by 1.0V.
2
Comparative analysis of metazoan chromatin organization

Ho, Joshua W. K.,Jung, Youngsook L.,Liu, Tao,Alver, Burak H.,Lee, Soohyun,Ikegami, Kohta,Sohn, Kyung-Ah,Minoda, Aki,Tolstorukov, Michael Y.,Appert, Alex,Parker, Stephen C. J.,Gu, Tingting,Kundaje, Ans Nature Publishing Group, a division of Macmillan P 2014 Nature Vol.512 No.7515
- 원문보기
Genome function is dynamically regulated in part by chromatin, which consists of the histones, non-histone proteins and RNA molecules that package DNA. Studies in Caenorhabditis elegans and Drosophila melanogaster have contributed substantially to our understanding of molecular mechanisms of genome function in humans, and have revealed conservation of chromatin components and mechanisms. Nevertheless, the three organisms have markedly different genome sizes, chromosome architecture and gene organization. On human and fly chromosomes, for example, pericentric heterochromatin flanks single centromeres, whereas worm chromosomes have dispersed heterochromatin-like regions enriched in the distal chromosomal ‘arms’, and centromeres distributed along their lengths. To systematically investigate chromatin organization and associated gene regulation across species, we generated and analysed a large collection of genome-wide chromatin data sets from cell lines and developmental stages in worm, fly and human. Here we present over 800 new data sets from our ENCODE and modENCODE consortia, bringing the total to over 1,400. Comparison of combinatorial patterns of histone modifications, nuclear lamina-associated domains, organization of large-scale topological domains, chromatin environment at promoters and enhancers, nucleosome positioning, and DNA replication patterns reveals many conserved features of chromatin organization among the three organisms. We also find notable differences in the composition and locations of repressive chromatin. These data sets and analyses provide a rich resource for comparative and species-specific investigations of chromatin composition, organization and function.
3
Voltage-Control Spintronics Memory (VoCSM) with Low Write Current using Highly-Selective Patterning Process

M. Shimizu,Y. Ohsawa,H. Yoda,S. Shirotori,B. Altansargai,N. Shimomura,Y. Kato,S. Oikawa,H. Sugiyama,T. Inokuchi,K. Koi,M. Ishikawa,K. Ikegami,A. Kurobe Korean Magnetics Society 2018 Journal of Magnetics Vol.23 No.4
- 원문보기
A voltage-control spintronics memory (VoCSM) which has a potential of low energy consumption uses the spin-Hall effect (SHE) and the voltage-controlled magnetic anisotropy (VCMA) effect for its write operation. In this work, the relationship between the critical switching current (Icsw) and the SHE electrode thickness (tN) is investigated in the range of 5 nm < tN < 8 nm. In the fabrication process, we develop highly-selective patterning process to stop MTJ etching precisely on the surface of the SHE electrode. Using the technique, Icsw is reduced by half as tN is varied from 8 nm to 5 nm, and Icsw of 112 mA at 20 ns write current pulse is obtained for MTJ size of 50 × 150 nm2 on Ta(2 nm)/TaB (3 nm) electrode. The results indicate that the decrease in the SHE electrode thickness is a promised method to reduce Icsw, which leads VoCSM to a low-energy-consumption device.