http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Jun Yong Bak,Min-Ki Ryu,Sang Hee Ko Park,Chi Sun Hwang,Sung Min Yoon IEEE 2014 IEEE electron device letters Vol.35 No.3
<P>We proposed a charge-trap-type memory transistor with a top-gate structure composed of Al<SUB>2</SUB>O<SUB>3</SUB> blocking/ZnO charge-trap/IGZO active/ Al<SUB>2</SUB>O<SUB>3</SUB> tunneling layer. The memory ON/OFF ratio higher than six-orders-of magnitude was obtained after the programming when the width and amplitude of program pulses were 100 ms and ±20 V, respectively. Excellent endurance was successfully confirmed under the repetitive programming with 10<SUP>4</SUP> cycles. The memory ON/OFF ratio higher than 10<SUP>3</SUP> was guaranteed even after the lapse of 10<SUP>4</SUP> s. Interestingly, the retention properties were affected by the bias conditions for read-out operations.</P>
Jun Yong Bak,Shinhyuk Yang,Ho-Jun Ryu,Sang Hee Ko Park,Chi Sun Hwang,Sung Min Yoon IEEE 2014 IEEE transactions on electron devices Vol.61 No.1
<P>An In-Ga-O (IGO) semiconductor was employed as a channel layer for the oxide thin-film transistors (TFTs). The IGO composition was chosen as an In/Ga atomic ratio of 65/35 and the films were deposited by RF magnetron sputtering method. To investigate the negative-bias illumination stress (NBIS) instability mechanisms, the IGO films were prepared with various oxygen partial pressures (O<SUB>2</SUB>/Ar+O<SUB>2</SUB> and P<SUB>O2</SUB>). The saturation mobilities of TFTs decreased with increasing P<SUB>O2</SUB>, which suggested that the increase in P<SUB>O2</SUB> reduced the carrier concentration. The NBIS characteristics of the TFTs were evaluated with the amounts of negative shifts in turn-on voltages (ΔV<SUB>ON</SUB>) under the illumination of typical red, green, and blue wavelengths with a V<SUB>GS</SUB> of -20 V for 10<SUP>4</SUP> s. The X-ray photoelectron spectroscopy analysis strongly suggested that the ΔV<SUB>ON</SUB> could be caused by the weakening of bonding strength between the atoms, which were analyzed as variations in the red shifts of O 1s peak. The drastic increase in the ΔV<SUB>ON</SUB> of the TFT using the IGO prepared without oxygen under the NBIS using the blue illumination was well explained by the combination defect model composed of intrinsic and extrinsic defects inherent within the IGO channel layer.</P>
Bak, Jun Yong,Yang, Sinhyuk,Ryu, Min Ki,Ko Park, Sang Hee,Hwang, Chi Sun,Yoon, Sung Min American Chemical Society 2012 ACS APPLIED MATERIALS & INTERFACES Vol.4 No.10
<P>The effects of electrode materials on the device stabilities of In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) were investigated under gate- and/or drain-bias stress conditions. The fabricated IGZO TFTs with a top-gate bottom-contact structure exhibited very similar transfer characteristics between the devices using indium–tin oxide (ITO) and titanium electrodes. Typical values of the mobility and threshold voltage of each device were obtained as 13.4 cm<SUP>2</SUP> V<SUP>–1</SUP> s<SUP>–1</SUP> and 0.72 V (ITO device) and 13.8 cm<SUP>2</SUP> V<SUP>–1</SUP> s<SUP>–1</SUP> and 0.66 V (titanium device). Even though the stabilities examined under negative and positive gate-bias stresses showed no degradation for both devices, the instabilities caused by the drain-bias stress were significantly dependent on the types of electrode materials. The negative shifts of the threshold voltage for the ITO and titanium devices after the 10<SUP>4</SUP>-s-long drain-bias stress were estimated as 2.06 and 0.96 V, respectively. Superior characteristics of the device using titanium electrodes after a higher temperature annealing process were suggested to originate from the formation of a self-limiting barrier layer at interfaces by nanoscale observations using transmission electron microscopy.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2012/aamick.2012.4.issue-10/am301253x/production/images/medium/am-2012-01253x_0007.gif'></P>
Jun Yong Bak,Min-Ki Ryu,Sang Hee Ko Park,Chi-Sun Hwang,Sung Min Yoon Institute of Electrical and Electronics Engineers 2014 IEEE transactions on electron devices Vol. No.
<P>A top-gate-structured charge-trap-type memory thin-film transistors (CTM-TFTs) using In-Ga-Zn-O (IGZO) channel and ZnO charge-trap layers were proposed to investigate effects of conductivity modulation for charge-trap layers on the memory performances. The electrical conductivity of ZnO charge-trap layers were controlled by varying the deposition temperatures to 100 °C (CTM1), 150 °C (CTM2), and 200 °C (CTM3) during the atomic layer deposition process and this strategy was well confirmed in the controlled devices using the conductivity-modulated ZnO channel layers. The IGZO TFT without charge-trap layer was also evaluated to have excellent device characteristics thanks to the high-quality interface between IGZO and Al<SUB>2</SUB>O<SUB>3</SUB> tunneling layer. The CTM1 and CMT2 exhibited a wide memory window (MW), sufficiently high program speed, and strong endurance properties. However, these promising memory behaviors could not be obtained for the CTM3 owing to its highly conductive charge-trap layer. For the evaluation of retention properties, there were big difference between the CTM1 and CTM2. Consequently, the CTM1 exhibited best memory performances. The MW and the memory margin in programmed current (ION/OFF) were estimated to be 17.1 V, and 1.3 × 10<SUP>8</SUP>, respectively. The I<SUB>ON/OFF</SUB> was obtained to be 2.6 × 10<SUP>6</SUP> and 1.8 × 10<SUP>3</SUP> after the 10<SUP>4</SUP> times cyclic operations and after the retention test for 10<SUP>4</SUP> s, respectively.</P>
Characteristics of Low-Temperature-Annealed ZnO-TFTs
Jun-Je Kim,이종훈,Jun-Yong Bak,김홍승,장낙원,Won-Jae Lee,조채용 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.1
We investigated the effects of low-temperature annealing at 300 ℃and 500 ℃in air and N2 on the electrical characteristics of ZnO thin-film transistors (TFTs). The ZnO layers were deposited on a bottom-gate patterned Si substrate by radio-frequency (RF) sputtering at room temperature. A low-temperature oxide (LTO) served as the gate dielectric. Unannealed ZnO-TFTs were operated in the enhancement mode with a threshold voltage of 13.7 V. A field-effect mobility of 0.024 cm2/Vs and an on–off current ratio of 2 × 102 were obtained. Low-temperature annealing of the ZnOTFTs in an N2 atmosphere reduced the threshold voltage of the TFTs to 12.5 V and increased the field-effect mobility to 0.047 cm2/Vs and the on–off current ratio to 2 × 103.
BAK, Geon-Yong,KANG, Mun-Il,SON, Kyu-Yeol,PARK, Jun-Gyu,KIM, Deok-Song,SEO, Ja-Young,KIM, Ji-Yun,ALFAJARO, Mia Madel,SOLIMAN, Mahmoud,BAEK, Yeong-Bin,CHO, Eun-Hyo,KWON, Joseph,CHOI, Jong-Soon,PARK, Sa The Japanese Society of Veterinary Science 2016 The Journal of veterinary medical science Vol.78 No.12
<P>To determine the occurrence and genetic diversity of <I>Sapelovirus A</I> (SV-A) in diarrhea and non-diarrhea feces of Korean pigs, 110 specimens from different age groups of pigs in the same farm were analyzed by RT-nested PCR. SV-As were detected in 60% of both diarrhea and non-diarrhea specimens regardless of age groups with primer pairs for 2C region, in which all diarrhea samples were co-infected by other enteric pathogens. Phylogenetical analysis of partial VP1 region showed that our strains and several other Korean strains belonged to cluster I, distinct from some strains reported in Korea and other countries. These data indicate that genetically distinct SV-As are frequently detected in Korean pigs irrespective of diarrhea and age.</P>
추궁절제수술후에 발생한 의인성 가성수막척수류 : 증례보고 Report of Cases
백광흠,김용석,김재민,고용,오성훈,오석전,김남규,김광명,박동우 대한신경외과학회 1996 Journal of Korean neurosurgical society Vol.25 No.10
Two unique cases of delayed nerve root herniation and entrapment into the pseudomeningocele through an unrepaired dural laceration at lumbar laminectomy were reported. Both patients presented with recurred radiculopathy. 3 and 6 years after first operation respectively. Lumbar myelography showed an extradural pseudomeningocele pouch in case 1 while showing no abnormality in case 2. Lumbar MRI in case 1 showed tangled herniated nerve root in the pouch of pseudomeningocele. Lumbar myelographic CT of case 2 showed delayed partial filling of the pseudomeningocele pouch only.
소나무와 리기다소나무를 사용하여 제조한 목재펠릿의 품질 특성 비교
서준원 ( Jun Won Seo ),이응수 ( Eung Su Lee ),강찬영 ( Chan Young Kang ),김시백 ( Si Bak Kim ),윤용한 ( Yong Han Yoon ),박헌 ( Heon Park ) 한국목재공학회 2015 목재공학 Vol.43 No.3
The quality characteristics of the woodpellet manufactured from two domestic pines (Pinus densiflora S. et Z. and Pinus rigida Mill.) were investigated for the efficient energy use of woody biomass resources. Properties of woodpellets such as moisture content, heating value, ash content, apparent density and durability were determined by using the standard test method of woodpellets of Korea Forest Research Institute (KFRI) and elemental analysis. The results of elemental analysis for C, H, O and N showed 61.42% carbon, 5.56% hydrogen, 32.87% oxygen, and 0.15% nitrogen for Pinus densiflora S. et Z. and 61.03% carbon, 5.96% hydrogen, 32.83% oxygen, and 0.18% nitrogen for Pinus rigida Mill. No significant difference between Pinus densiflora S. et Z. and Pinus rigida Mill was observed on elemental analysis. Heating values of each woodpellet were ranged from 19.00 to 19.42 MJ/kg which satisfied the first grade quality standard (≥ 18.0 MJ/kg) by KFRI. The ash contents of woodpellet were slightly different between Pinus densiflora S. et Z. and Pinus rigida Mill., and satisfied the first grade quality standard (≤ 0.7%) by KFRI. Apparent density of woodpellet (Pinus densiflora S. et Z.) was passed the first grade standard level (≥ 640 kg/m3), and woodpellets from Pinus rigida Mill. satisfied the second grade quality of the standard. The moisture contents of each woodpellet were satisfied by the first grade quality standard (≤ 10%). The durability of woodpellet (Pinus densiflora S. et Z.) was passed the third grade level (≥ 95%), but Pinus rigida Mill. woodpellet was insufficient to satisfy the quality standard.