http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Jukka T. Tanskanen (검색결과 1 건)
- 무료
- 기관 내 무료
- 유료
-
Area-selective chemical vapor deposition of Co for Cu capping layer
Seung Wook Ryu,Soohyeon Kim,Jaehong Yoon,Jukka T. Tanskanen,Hyungjun Kim,Han-Bo-Ram Lee 한국물리학회 2016 Current Applied Physics Vol.16 No.1
Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
