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Jungkyun Park,Geunyoung Yeom,JongHyeuk Lim,Kyongnam Kim 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.2
The characteristics of a large-size internal-type inductively coupled plasma (ICP) source having a ``double-comb-type" antenna have been investigated for the processing of a large-area flat-panel display substrate having a size of 2,300 mm × 2,000 mm, and its characteristics were compared with those for an ICP source having a ``serpentine-type" antenna. The ICP source with the ``double-comb-type" antenna showed a lower impedance, a higher plasma uniformity, and a higher plasma density compared to the ICP source with the ``serpentine-type" antenna. The measured plasma density and uniformity of the ICP source with the ``double-comb-type" antenna were higher than 8.5 × 10 10/㎤ and lower than 14%, respectively, at a 10 kW rf power and 15 mTorr of Ar. The etch uniformity of the photoresist within the substrate was about 12.5% at a 8 kW rf power and 15 mTorr Ar/O₂ (7 : 3). The characteristics of a large-size internal-type inductively coupled plasma (ICP) source having a ``double-comb-type" antenna have been investigated for the processing of a large-area flat-panel display substrate having a size of 2,300 mm × 2,000 mm, and its characteristics were compared with those for an ICP source having a ``serpentine-type" antenna. The ICP source with the ``double-comb-type" antenna showed a lower impedance, a higher plasma uniformity, and a higher plasma density compared to the ICP source with the ``serpentine-type" antenna. The measured plasma density and uniformity of the ICP source with the ``double-comb-type" antenna were higher than 8.5 × 10 10/㎤ and lower than 14%, respectively, at a 10 kW rf power and 15 mTorr of Ar. The etch uniformity of the photoresist within the substrate was about 12.5% at a 8 kW rf power and 15 mTorr Ar/O₂ (7 : 3).