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Sang Ho Rha,Jisim Jung,Yoonsoo Jung,Yoon Jang Chung,Un Ki Kim,Eun Suk Hwang,Byoung Keon Park,Tae Joo Park,Jung-Hae Choi,Cheol Seong Hwang IEEE 2012 IEEE transactions on electron devices Vol.59 No.12
<P>The transmission-line method (TLM) was adopted to clarify the causes of device performance variation according to the source/drain metal electrode and device structure of a thin-film transistor using an amorphous indium-gallium-zinc-oxide channel. Using the TLM, the channel characteristics independent of contact resistance were extracted for the two different contact metals, i.e., Ti and Mo. Based on these results, the mobility characteristics were compared in terms of device scaling and contact structure in the source/drain overlap region. In addition, the transport characteristics according to the contact structure of the source/drain metal electrode were investigated in detail and reproduced using the simulation model.</P>
Sang Ho Rha,Un Ki Kim,Jisim Jung,Hyo Kyeom Kim,Yoon Soo Jung,Eun Suk Hwang,Yoon Jang Chung,Mijung Lee,Jung-Hae Choi,Cheol Seong Hwang IEEE 2013 IEEE transactions on electron devices Vol.60 No.3
<P>Asymmetric Schottky contact thin-film-transistors (ASC-TFTs) with an amorphous- In<SUB>2</SUB>Ga<SUB>2</SUB>ZnO<SUB>7</SUB> channel were fabricated, and their operation characteristics were examined. Ti, Ni, and Pt were evaluated as source/drain metal, and the variations in the device performance were analyzed in terms of energy level and bias polarity, which were carefully simulated to understand the influence of the contact properties on the device performance. The contact nature largely influenced the distribution of potential under the given gate and drain biases, as well as the accompanying carrier accumulation layer and current path formation. Schottky-type contact induced conduction path formation even on the back surface of the channel when drain voltage was high even with sufficiently high gate bias being applied. Based on these results, by applying different metal for each source and drain metal, ASC-TFTs integrating TFTs and Schottky diodes were fabricated, which showed a rectification ratio of drain current higher than 10<SUP>8</SUP> according to the bias direction. In addition, the transfer and output characteristics of ASC-TFTs were evaluated for various operation regimes, and the roles of the Schottky junction in device operation were studied in detail.</P>
Study of HfO2 High-k Gate Oxide for Low-Temperature Poly-Si TFT
다까시노구찌,Jisim Jung,권장연,Seok Won Jeong,Seong Hoon Jeong,Wenxu XIANYU,노용한 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
We investigated HfO2/SiO2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO2 in thin film transistors (TFTs). Ultra thin SiO2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O2 and N2 ambient, respectively, to form polycrystalline HfO2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10.7 A/cm2 at .10 V and low EOT by HfO2/SiO2 double-layer structure.
강명희,김지심,정지윤 이화여자대학교 교육과학연구소 2008 교육과학연구 Vol.39 No.1
본 연구는 웹기반 문제중심학습에서 학습결과를 예측하는 변인을 규명하기 위해 선행연구에서 의미 있는 요소로 분석되었던 자기효능감과 초인지 수준을 학습자특성 변인으로 선정하였고, 학습자가 인식하는 인지적 실재감과 몰입을 학습 중 변인으로 선정하였으며, 성취도, 문제해결력 그리고 만족도를 학습결과 변인으로 선정하여 이들의관계와 학습결과의 세 변인인 성취도, 문제해결력, 만족도를 예측하는 변인을 규명하였다. 본 연구의 대상자는 5주 동안 문제제기, 문제해결단계, 문제후속단계, 과제물 제출 및 평가 단계로 진행된 문제중심학습에 참여한 60명의 대학생이다. 연구결과는 첫째, 자기효능감이 성취도를 예측하는 변인으로 나타났다. 둘째, 문제해결력으로 설명되는 학습결과에 대해서는 몰입, 자기효능감, 초인지가 예측력을 가지는 것으로 나타났다. 셋째, 만족도에 대해서는 몰입만이 예측력을 가지는 변인으로 분석되었다. The purpose of the study is to identify the relationship among factorsself-efficacy, metacognition, cognitive presence, flow, and learning outcomes thathave been investigated partially in the consecutive learning process; before,during, and after learning. This study was conducted with sixty students enrolledin web-based PBL class at a university in Korea. The problem was to redesigna website in order to activate communication among the users. The questionnaires were revised and complemented on the basis of relatedliteratures. Self-reported response of self-efficacy and meta-cognition wasconducted before problem-based learning was obtained. During learning, the levelof cognitive presence and flow was measured. Lastly, after learning, data onacademic achievement was obtained by an online test. The level of perceivedproblem-solving performance and satisfaction was measured by questionnaires. Collected data were analyzed by multiple regression. Based on the obtained data, we empirically identified the significant relationamong prior factors needed before learning (self-efficacy, metacognition),cognitive presence and flow, and the learning outcomes (achievement,problem-solving performance, and satisfaction). We also found predictors oflearning outcomes. For achievement, it was indicated that the predictor wasself-efficacy. In addition, it showed that the flow, the self-efficacy, and themetacognition were the predictors of problem-solving performance. Lastly, it wasindicated the predictor of satisfaction was flow. Further, we need to make various efforts to investigate more exact relationshipsamong these factors on virtual learning environment. We expect that this studywill contribute to the continuous examinations on the role of cognitive presenceand the flow is required.