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Chemically improved high performance printed indium gallium zinc oxide thin-film transistors
Jeong, Sunho,Lee, Ji-Yoon,Lee, Sun Sook,Oh, Se-Wook,Lee, Hyun Ho,Seo, Yeong-Hui,Ryu, Beyong-Hwan,Choi, Youngmin Royal Society of Chemistry 2011 Journal of materials chemistry Vol.21 No.43
<P>With the aim of facilitating the high performance printed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs), we present the heretofore unrecognized chemical methodology for tailoring the chemical structures of printable IGZO semiconductors through incorporation of ethylene glycol in sol–gel derived precursor solutions. With the optimal composition of ethylene glycol, the device performance of TFT employing the printed IGZO semiconducting layer annealed at 400 °C is significantly improved with the field-effect saturation mobility of 4.9 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>. In addition, by lowering the contact resistance between the source/drain electrode and printed IGZO semiconducting layer, the device performance is further improved with the field-effect saturation mobility of 7.6 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>.</P> <P>Graphic Abstract</P><P>With the aim of facilitating the high performance printed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs), we present the heretofore unrecognized chemical methodology for tailoring the chemical structures of printable IGZO semiconductors through incorporation of ethylene glycol in sol–gel derived precursor solutions. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c1jm13767k'> </P>
Fabrication of the Organic Thin-Film Transistors Based on Ink-Jet Printed Silver Electrodes
Jeong, Sunho,Kim, Dongjo,Lee, Sul,Park, Bong-Kyun,Moon, Jooho TaylorFrancis 2006 Molecular Crystals and Liquid Crystals Vol.459 No.1
<P>We present the organic thin-film transistors (OTFTs) based on the ink-jet printed silver electrodes as the source and drain electrodes. To fabricate the conductive silver electrodes by the low-temperature heat-treatment below 200°C, the inks containing silver nano-particles with the size of about 20 nm were printed on the silicon substrate with a 300 nm-thick SiO<SUB>2</SUB>. It was observed that the conductivity of the ink-jet printed lines after heat-treatment at 200°C was similar to that of a bulk silver material. Poly(3,3″-dialkylquarterthiophene) (PQT-12) was deposited over the printed silver electrodes to fabricate the organic transistor. I–V character was measured to investigate an electrical performance of the fabricated transistor.</P>
Jeong, Sunho,Kim, Dongjo,Park, Bong Kyun,Lee, Sul,Moon, Jooho IOP Pub 2007 Nanotechnology Vol.18 No.2
<P>A solution-processable organosiloxane-based organic–inorganic hybrid gate dielectric layer for application in organic thin-film transistors has been synthesized by a sol–gel process. In the sol–gel derived hybrid film, owing to an incomplete condensation reaction, silanol groups serve as functional groups of the inorganic siloxane backbone. In order to investigate the influence of the silanol groups on the electrical performance of transistors with organosiloxane-based dielectrics, transistors employing hybrid dielectrics with different amounts of the silanol group were prepared and electrical performance parameters such as off-current, threshold voltage, field-effect mobility, and hysteresis were analysed. </P>
Jeong, Sunho,Woo, Kyoohee,Kim, Dongjo,Lim, Soonkwon,Kim, Jang Sub,Shin, Hyunjung,Xia, Younan,Moon, Jooho WILEY-VCH Verlag 2008 Advanced Functional Materials Vol.18 No.5
<B>Graphic Abstract</B> <P>With the aim of preparing a high-performance conductive ink, the surface oxide layer on Cu nanoparticles synthesized in ambient atmosphere is minimized by adjusting the molecular weight of poly(N-vinylpyrrolidone) capping molecules. On p. 679, Joohoo Moon andco-workers demonstrate that by minimizing the thickness of the surface oxide layer, Cu granular films with good conductivity on a plastic substrate can be obtained by sintering nanoparticle assembles. <img src='wiley_img/1616301X-2008-18-5-ADFM200890021-content.gif' alt='wiley_img/1616301X-2008-18-5-ADFM200890021-content'> </P>
Solution-Processed Zinc Tin Oxide Semiconductor for Thin-Film Transistors
Jeong, Sunho,Jeong, Youngmin,Moon, Jooho American Chemical Society 2008 The Journal of Physical Chemistry Part C Vol.112 No.30
<P>A zinc tin oxide (ZTO) semiconductor layer for thin-film transistor was fabricated using solution-processable sol−gel material. To obtain semiconductor characteristics, ZTO gels should be annealed such that salts and organic components in the ZTO layer undergo complete decomposition. The thermal behavior of ZTO precursor materials was investigated, and the electrical performances of solution-processed transistors were analyzed as a function of the annealing temperature of the ZTO semiconductor layer. We also studied the electrical performance of transistors as a function of the Sn content of the ZTO layer, in order to understand its influence on the device characteristics of solution-processed transistors.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2008/jpccck.2008.112.issue-30/jp803475g/production/images/medium/jp-2008-03475g_0005.gif'></P>
Jeong, Sunho,Lee, Ji-Yoon,Lee, Sun Sook,Choi, Youngmin,Ryu, Beyong-Hwan American Chemical Society 2011 The Journal of Physical Chemistry Part C Vol.115 No.23
<P>Sol–gel-derived oxide semiconductors annealed at a low temperature have been of great interest recently in various thin-film transistor (TFT) applications. However, studies on the influence of metal salt precursor on sol–gel-derived oxide semiconductor annealed at a low temperature have not yet been reported. In this study, the impact of metal salt precursor on the chemical structure evolution of Ga-doped In<SUB>2</SUB>O<SUB>3</SUB> (IGO) semiconductor and electrical performance of thin-film transistors with a corresponding oxide semiconductor is investigated. X-ray photoelectron spectroscopy (XPS)-based chemical structure analysis is carried out in conjunction with an understanding of the electrical performance of device. It is revealed that in addition to the thermally enhanced evolution of metal oxide chemical structure, the impurities due to the incomplete thermal decomposition of metal salt precursor do not only hinder the formation of metal oxide lattice, resulting in an electrically inactive oxide semiconductor, but also significantly deteriorate the electrical performance, such as field-effect mobility, subthreshold swing, and on/off current ratio, of thin-film transistor.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2011/jpccck.2011.115.issue-23/jp202522s/production/images/medium/jp-2011-02522s_0010.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp202522s'>ACS Electronic Supporting Info</A></P>
Jeong, Sunho,Woo, Kyoohee,Kim, Dongjo,Lim, Soonkwon,Kim, Jang Sub,Shin, Hyunjung,Xia, Younan,Moon, Jooho WILEY-VCH Verlag 2008 Advanced Functional Materials Vol.18 No.5
<P>With the aim of preparing a high performance conductive ink, we sought to control the surface chemistry of Cu nanoparticles so as to minimize surface oxidation. Specifically, the surface oxide layer on Cu nanoparticles synthesized in ambient atmosphere was minimized by adjusting the molecular weight of poly(N-vinylpyrrolidone) capping molecules, as confirmed by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses. In addition, we demonstrate that by minimizing the thickness of the surface oxide layer, Cu granular films with good conductivity could be obtained by sintering nanoparticle assembles. Finally, we fabricated highly conductive Cu patterns on a plastic substrate by ink-jet printing.</P> <B>Graphic Abstract</B> <P>Cu nanoparticle-based conductive ink-jet printable inks: To prepare a high performance conductive ink, the surface oxide layer on Cu nanoparticles synthesized in ambient atmosphere was minimized by adjusting the molecular weight of poly(N-vinylpyrrolidone) capping molecules. By minimizing the thickness of the layer, Cu granular films on a plastic substrate with good conductivity could be obtained by sintering nanoparticle assembles. <img src='wiley_img/1616301X-2008-18-5-ADFM200700902-content.gif' alt='wiley_img/1616301X-2008-18-5-ADFM200700902-content'> </P>