http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Ashok J,Sowmia K R,Jayashree K,Priya Vijay 한국인터넷정보학회 2023 KSII Transactions on Internet and Information Syst Vol.17 No.2
In CRNs, SS is of utmost significance. Every CR user generates a sensing report during the training phase beneath various circumstances, and depending on a collective process, either communicates or remains silent. In the training stage, the fusion centre combines the local judgments made by CR users by a majority vote, and then returns a final conclusion to every CR user. Enough data regarding the environment, including the activity of PU and every CR's response to that activity, is acquired and sensing classes are created during the training stage. Every CR user compares their most recent sensing report to the previous sensing classes during the classification stage, and distance vectors are generated. The posterior probability of every sensing class is derived on the basis of quantitative data, and the sensing report is then classified as either signifying the presence or absence of PU. The ISVM technique is utilized to compute the quantitative variables necessary to compute the posterior probability. Here, the iterations of SVM are tuned by novel GO-PSA by combining GOA and PSO. Novel GO-PSA is developed since it overcomes the problem of computational complexity, returns minimum error, and also saves time when compared with various state-of-the-art algorithms. The dependability of every CR user is taken into consideration as these local choices are then integrated at the fusion centre utilizing an innovative decision combination technique. Depending on the collective choice, the CR users will then communicate or remain silent.
Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer
Ashok Kumar, A.,Rajagopal Reddy, V.,Janardhanam, V.,Yang, H.D.,Yun, H.J.,Choi, C.J. Elsevier Sequoia 2013 Journal of alloys and compounds Vol.549 No.-
The effect of poly (3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) interlayer on the Schottky barrier parameters of Pt/n-type Ge Schottky contacts was investigated. The PEDOT:PSS interlayer in between Pt and n-type Ge influences the space charge region of the Pt/n-type Ge Schottky junction, leading to increase in the barrier height. Due to interface dipoles and lateral barrier inhomogeneities caused by the presence of PEDOT:PSS interlayer, Pt/PEDOT:PSS/n-type Ge Schottky contact showed a deviation from the ideal thermionic emission model of the carrier transport at the metal/semiconductor junction. From the reverse current-voltage (I-V) characteristics, the Poole-Frenkel emission and Schottky emission were found to be the dominating carrier conduction mechanisms of Pt/PEDOT:PSS/n-type Ge Schottky contact at lower and higher reverse biases, respectively.
Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants
WANG, J. S.,FONASH, S. J.,ASHOK, S. 충남대학교 공업교육연구소 1986 論文集 Vol.8 No.3
Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. in this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.
Sim, J.K.,Ashok, K.,Ra, Y.H.,Im, H.C.,Baek, B.J.,Lee, C.R. Elsevier 2012 Current Applied Physics Vol.12 No.2
In this paper, we propose low temperature co-fired ceramic-chip on board (LTCC-COB) package with improved thermal characteristics; no insulation layer exists between the LED chip and metal base. In actual measurement as well as in thermal simulation, the proposed LED lamp structure showed excellent thermal properties, compared with surface mound device-printed circuit board (SMD-PCB) package LED lamp. The optical output power, thermal distribution, current-voltage (I-V) and electroluminescence (EL) were measured and compared to analyze the characteristics of LTCC-COB package LED lamp with SMD-PCB package LED lamp. EL peak intensity of LTCC-COB package LED lamp is 1.75 times better than that of SDM-PCB package LED lamp. The thermal resistance between packing area and air was found to be 7.3 K/W and 7.9 K/W for LTCC-COB package and SMD-PCB package respectively. The proposed LTCC-COB packaged LED lamp is not only suitable for high power LED package due to its low thermal resistance but also a promising solution for illumination modules.
Yan, Xing,Poxson, David J.,Cho, Jaehee,Welser, Roger E.,Sood, Ashok K.,Kim, Jong Kyu,Schubert, E. Fred WILEY‐VCH Verlag 2013 Advanced Functional Materials Vol.23 No.5
<P><B>Abstract</B></P><P>An optimized four‐layer tailored‐ and low‐refractive index anti‐reflection (AR) coating on an inverted metamorphic (IMM) triple‐junction solar cell device is demonstrated. Due to an excellent refractive index matching with the ambient air by using tailored‐ and low‐refractive index nanoporous SiO<SUB>2</SUB> layers and owing to a multiple‐discrete‐layer design of the AR coating optimized by a genetic algorithm, such a four‐layer AR coating shows excellent broadband and omnidirectional AR characteristics and significantly enhances the omnidirectional photovoltaic performance of IMM solar cell devices. Comparing the photovoltaic performance of an IMM solar cell device with the four‐layer AR coating and an IMM solar cell with the conventional SiO<SUB>2</SUB>/TiO<SUB>2</SUB> double layer AR coating, the four‐layer AR coating achieves an angle‐of‐incidence (AOI) averaged short‐circuit current density, <I>J</I><SUB>SC</SUB>, enhancement of 34.4%, whereas the conventional double layer AR coating only achieves an AOI‐averaged <I>J</I><SUB>SC</SUB> enhancement of 25.3%. The measured reflectance reduction and omnidirectional photovoltaic performance enhancement of the four‐layer AR coating are to our knowledge, the largest ever reported in the literature of solar cell devices.</P>
Fatigue Life Validation and Analysis of Connecting Rod
Anand. D. Dantale,Ashok. J. Keche 보안공학연구지원센터 2014 International Journal of Hybrid Information Techno Vol.7 No.6
The connecting rod in four stroke reciprocating diesel engine is subjected to variable loading when Engine is in operating condition. The design of connecting rod is critical for the engine Performance, fatigue life, linear vibration & durability of engine. The fatigue failure is occurred due to alternating compressive & tensile stresses during its two revolutions. The fuel combustion inside cylinder generates a huge compressive force at power stroke. The 3D model is prepared and CAE analysis is done to predict the maximum Stresses and check whether it is safe for fatigue failure. The modification in design is done to make it safe for fatigue life. The experimental Fatigue testing is carried out to validate the predicted & Actual fatigue life of connecting rod.
Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
Ashok Kumar, A.,Dasaradha Rao, L.,Rajagopal Reddy, V.,Choi, C.J. Elsevier 2013 Current Applied Physics Vol.13 No.6
We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements have been carried out in the temperature range of 300-400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Φ<SUB>bo</SUB>) and ideality factor (n) are estimated from I-V characteristics. It is observed that there is a decrease in n and an increase in the Φ<SUB>bo</SUB> with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Φ<SUB>bo</SUB> and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (R<SUB>s</SUB>) is calculated by Chenug's method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both Poole-Frenkel and Schottky emissions are described and discussed. Furthermore, capacitance-voltage (C-V) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman's method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.