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A New Approach for Accurate RTL Power Macro-Modeling
Kawauchi, Hirofumi,Taniguchi, Ittetsu,Fukui, Masahiro The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.1
Register transfer level power macromodeling is well known as a promising technique for accurate and efficient power estimation. This paper proposes effective approaches based on the tablebased method for the RTL power macro-modeling. The new parameter SD, which characterizes the distribution of switching activities for each gate in the circuit, is one of the contributions. The new parameter SD has strong correlation with power consumption. We also propose an accurate table reference method considering the circuit characteristics. The table reference method is applicable for every table-based method and outputs more accurate power value. The experimental results show that the combination of the proposed methods reduces max error 30.36% in the best case, comparing conventional methods. The RMS error is also improved 1.70% in the best case.
A New Approach for Accurate RTL Power Macro-Modeling
Hirofumi Kawauchi,Ittetsu Taniguchi,Masahiro Fukui 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.1
Register transfer level power macromodeling is well known as a promising technique for accurate and efficient power estimation. This paper proposes effective approaches based on the tablebased method for the RTL power macro-modeling. The new parameter SD, which characterizes the distribution of switching activities for each gate in the circuit, is one of the contributions. The new parameter SD has strong correlation with power consumption. We also propose an accurate table reference method considering the circuit characteristics. The table reference method is applicable for every table-based method and outputs more accurate power value. The experimental results show that the combination of the proposed methods reduces max error 30.36% in the best case, comparing conventional methods. The RMS error is also improved 1.70% in the best case.
A Practical Battery Charge/Discharge Simulator for Portable System Design
Keita KOJIMA,Sayaka IWAKOSHI,Ittetsu TANIGUCHI,Masahiro FUKUI 대한전자공학회 2009 ITC-CSCC :International Technical Conference on Ci Vol.2009 No.7
Accompanying with the rapid popularization of portable embedded systems, the battery technology continues remarkable improvement to achieve low-cost and long battery life. This paper proposes a practical battery simulator which enables simulation of the battery charge/discharge behavior considering characteristics of the battery such as electro chemical diffusion and voltage decline due to inner resistances, and the experimental result in realistic condition is also discussed.
A New Approach for RTL Power Macro-Modeling
Hirofumi KAWAUCHI,Toshio MORIKAWA,Ryohei MURASHIMA,Ittetsu TANIGUCHI,Masahiro FUKUI 대한전자공학회 2009 ITC-CSCC :International Technical Conference on Ci Vol.2009 No.7
This paper presents a new power macro-modeling technique for resister transfer level (RTL). RTL power macro-modeling technique is well known as promising technique for fast power estimation. Our method is based on a table look-up constructed by statistical information extracted from the primary inputs to the circuit. In this paper, we propose a novel power estimation method with a new parameter SD. This parameter characterizes switching activity of an internal circuit. The switching activities of each gate are strongly related with the power consumption. Experimental results show that the proposed method improves RMS error about 10% in average with the ISCAS-85 combinational circuits. The average RMS error of our model was 4.5%.