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Ibrahim Yucedag,Ahmet Kaya,Semsettin Altindal,Ibrahim Uslu 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.12
Both the electrical and the dielectric properties of the Al/Co-doped polyvinyl alcohol/p-Simetal-polymer-semiconductor (MPS) structure have been studied using temperature-dependentadmittance-voltage (C/G-V) measurements at temperatures below room temperature at 300 kHz. The C-V plot indicates two peaks for each temperature corresponding to inversion and accumulationregions, respectively. The first peak was attributed to a particular distribution of interfacetraps (Dit), and the second was attributed to the series resistance (Rs) and interfacial polymerlayer. G/!-V plots show almost U-shape behavior for all temperatures and a crossing at almost 3V. Such behavior of the G/!-V plots may be attributed to the lack of free charge at low temperatures. After this intersection point, while the value of the capacitance (C) starts decreasing, theG/! continues to increase. The temperature-dependent real and imaginary parts of the dielectricconstant ("0, "00) and of the electric modulus (M0, M00), as well as the ac electrical conductivity(ac), of structure were obtained using C and G data before and after the intersection point (at2 and 6 V), respectively. Experimental results show that the "0, "00, loss tangent (tan), ac, M0,and M00 values were strong functions of the temperature and the applied bias voltage. In addition,G/!-T and "00-T plots show two different behaviors, one before and the other after the intersectionpoint.