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M. Ismail,A.M. Rana,S.-U. Nisa,F. Hussain,M. Imran,K. Mahmood,I. Talib,E. Ahmed,D.H. Bao 한국물리학회 2017 Current Applied Physics Vol.17 No.10
Bilayer CeO2/TiO2 films with high-k dielectric property were prepared by rf magnetron sputtering technique at room temperature. Effect of annealing treatment on resistive switching (RS) properties of bilayer CeO2/TiO2 films in O2 ambient at different temperature in the range of 350e550 C was investigated. Our results revealed that the bilayer films had good interfacial property at 500 C and this annealing temperature is optimum for different RS characteristics. Results showed that bilayer CeO2/TiO2 film perform better uniformity and reliability in resistive switching at intermediate temperature (i.e. 450 C and 500 C) instead of low and high annealing temperature (i.e. 350 C and 550 C) at which it exhibits poor crystalline structure with more amorphous background. Less Gibbs free energy of TiO2 as compared to CeO2 results in an easier re-oxidation of the filament through the oxygen exchange with TaN electrode. However, the excellent endurance property (>2500 cycles), data retentions (105 s) and good cycle-to-cycle uniformity is observed only in 500 C annealed devices. The plots of cumulative probability, essential memory parameter, show a good distribution of Set/Reset voltage.
M.Y.A. Rahman,M.M. Salleh,I.A. Talib,M. Yahaya,A. Ahmad 한국물리학회 2007 Current Applied Physics Vol.7 No.4
This paper deals with the current transport mechanism of solid state photoelectrochemical cells of ITO/TiO2/PVCLiClO4/graphiteas well as the physical properties of a component of a device aecting its performance. The principle of operation and a schematic energylevel diagram for the materials used in the photoelectrochemical cells are presented. The device makes use of ITO lms, TiO2 lms, PVCLiClO4 rectication. TheJscand Voc obtained at 100 mW cm. 2 were 0.95l Acm. 2 and 180 mV, respectively.