http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs
Sungyoul Choi,최정용,Sunglae Cho,이용욱,Bongjun Kim,Huyntak Kim 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
We have successfully fabricated an epitaxial Mn-doped p-type GaAs thin film on a GaAs(001) substrate by using molecular beam epitaxy at a substrate temperature of 500 $^\circ$C. For the Mn-doped GaAs thin film with a hole concentration of $n_p \approx 2.0 \times 10^{17}$ cm$^{-3}$, an abrupt first-order metal-insulator transition (MIT) is observed at room temperature. The temperature dependence of the resistivity does not show a structural phase transition up to 420 K. The MIT temperature is controlled by applying a voltage without external hole doping. The abrupt MIT is discussed, along with breakdown.