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Design Customization of Respiratory Mask based on 3D Face Anthropometric Data
Chih-Hsing Chu,Szu-Hao Huang,Chih-Kai Yang,Chun-Yang Tseng 한국정밀공학회 2015 International Journal of Precision Engineering and Vol. No.
This study presents a machine learning based method for design customization of a 3D respiratory mask. A parametric model of a3D human face was constructed from an anthropometric database consisting of 495 facial models. An AdaBoost.R algorithm wasapplied to identify a set of measurable parameters most related to the facial geometry. The correlation between parameters wasestimated using principal component analysis and linear regression. With those parameter values as input, the parametric modelgenerates 3D meshes of a human face that serve as a design reference for the construction of a customized respiratory mask of agood fit. We conducted a series of experiments with 10-fold cross-validation to validate the effectiveness of the proposed method.
Ching-Hua Huang,Po-Lin Kuo,Ya-Ling Hsu,Tai-Tsung Chang,Hsing-I Tseng,Yu-Te Chu,Chang-Hung Kuo,Huan-Nan Chen,Chih-Hsing Hung 한국식품영양과학회 2010 Journal of medicinal food Vol.13 No.2
Dietary flavonoids have various biological functions, and there is increasing evidence that reduced prevalence and severity of allergic reactions are associated with the intake of flavonoids. Among natural flavonoids, apigenin is a potent anti-inflammatory agent. However, the mechanisms of apigenin's effect remain uncertain. Monocyte-derived chemokine (MDC) plays a pivotal role in recruiting T-helper (Th) 2 cells in the allergic inflammation process. In the late phase of allergic inflammation, the Th1 chemokine interferon-inducible protein 10 (IP-10) has also been found in elevated levels in the bronchial alveolar fluid of asthmatic children. We used human THP-1 monocyte cells, pretreated with or without apigenin, prior to lipopolysaccharide stimulation. By means of enzyme-linked immunosorbent assay, we found that apigenin inhibited production of both MDC and IP-10 by THP-1 cells and that the suppressive effect of apigenin was not reversed by the estrogen receptor antagonist ICI182780. The p65 phosphorylation of nuclear factor κB remained unaffected, but the phosphorylation of p38, c-Jun N-terminal kinase, and extracellular signal-regulated kinase mitogen-activated protein kinase pathways were all blocked. We found that inhibition of c-raf phosphorylation might be the target of apigenin's anti-inflammation property.
Real-World Effectiveness and Safety of SOF/LDV for Pa-tients with Chronic Hepatitis C in Taiwan
( Ching-chu Lo ),( Pin-nan Cheng ),( Chi-yi Chen ),( Chung-feng Huang ),( Hsing-tao Kuo ),( Kuo-chih Tseng ),( Yi-hsiang Huang ),( Chi-ming Tai ),( Cheng-yuan Peng ),( Ming-jong Bair ),( Chien-hung Ch 대한간학회 2021 춘·추계 학술대회 (KASL) Vol.2021 No.1
Ying-Ying Zhang,Jungwoo Oh,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Ga-Won Lee,Majhi, P.,Hsing-Huang Tseng,Jammy, R.,Hi-Deok Lee IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>In this paper, thermally stable Ni germanide using a Ni-Pt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed Ni-Pt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 <SUP>°</SUP>C for 30 min. In addition, the surface of the Ni-Pt(1%) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as Pt<SUB>x</SUB>Ge<SUB>y</SUB> and Ni<SUB>x</SUB>Pt<SUB>1-x</SUB>Ge<SUB>y</SUB> can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed Ni-Pt(1%) alloy could be promising for high-mobility Ge MOSFET applications.</P>
Review of alternative gate stack technology research during the last decade
Byoung Hun Lee1,Paul Kirsch,Husam Alshareef,Prashant Majhi,Rino Choi,Seungchul Song,Hsing Huang Tseng,Raj Jammy 한국세라믹학회 2006 세라미스트 Vol.9 No.4
Scaling of the gate stack has been one of the major contributors to the performance enhancement of CMOSFET devices in past technology generations The scalability of gate stack has diminished in recent years and alternative gate stack technology such as metal electrode and high-k dielectrics has been intensively studied during almost matches that of conventional SiO2-based gate dielectrics. However, many technical challenges remain to be resolved before alternative gate stacks can be introduced into mainstream technology. This paper reviews the reasearch in alternative gate stack technologies to provide insights for future reasearch.
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Zhang, Ying-Ying,Oh, Jungwoo,Li, Shi-Guang,Jung, Soon-Yen,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Tseng, Hsing-Huang,Jammy, Raj,Bae, Tae-Sung,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.1
Min Sang Park,Kyong Taek Lee,Chang Yong Kang,Gil-Bok Choi,Hyun Chul Sagong,Chang Woo Sohn,Byoung-Gi Min,Jungwoo Oh,Majhi, Prashant,Hsing-Huang Tseng,Lee, Jack C,Jeong-Soo Lee,Jammy, Raj,Yoon-Ha Jeong IEEE 2010 IEEE electron device letters Vol.31 No.10
<P>We present a comparative study of the effects of a Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices, the drive current increases because Si/SiGe heterojunction layers form a SiGe quantum well, which reduces carrier scattering. Conversely, SiGe samples without a Si capping layer suffer severe interface degradation, due to Ge diffusing into the gate dielectric. Devices using a Si capping layer have enhanced RF performance and reduced low-frequency noise, which is a key factor affecting phase noise. There is an increase in the RF figures of merit. These benefits indicate that a Si capping layer should be used in SiGe channel pMOSFETs.</P>