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Howoon Kim,Jang-Kyoo Shin,Dae-Hyuk Kwon,Gil S. Lee 한국진공학회(ASCT) 2003 Journal of Korean Vacuum Science & Technology Vol.7 No.2
Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with C₄F_8 and Si₂H_6/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5~5.
Structural Investigations of MBE-Grown InAs Layers on GaAs
Sung-ManKim,Sang-heonLee,HowoonKim,Jang-KyooShin,Jae-YoungLeem,Jong-SuKim,Jin-SooKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.1
High-quality InAs films were grown by varying GaAs the buffer layer thickness and using different substrates, both 2-tilted toward the [0 11] and non-tilted GaAs(100) substrate, by molecular beam epitaxy (MBE). Their electrical and structure properties were investigated by Hall measurements, transmission electron microscopy (TEM) and high-resolution X-ray diraction (HRXRD). The 0.5- m InAs film grown on a 2-tilted GaAs substrate and the 1-m InAs lm on non-tilted GaAs substrate had electron mobilities of 10,952 cm2/Vs and 11,944 cm2/Vs, respectively, with same Si doping concentration at room temperature. TEM images showed that high-quality InAs epitaxial layers were obtained with reduced dislocation density at the InAs/GaAs interface.