http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Hopstaken, Marinus (검색결과 1 건)
- 무료
- 기관 내 무료
- 유료
-
Effects of the incorporation of alkali elements on Cu(In,Ga)Se<sub>2</sub> thin film solar cells
Shin, Donghyeop,Kim, Jekyung,Gershon, Talia,Mankad, Ravin,Hopstaken, Marinus,Guha, Supratik,Ahn, Byung Tae,Shin, Byungha Elsevier 2016 Solar energy materials and solar cells Vol.157 No.-
<P><B>Abstract</B></P> <P>This study describes in detail the effects of sodium and potassium on Cu(In,Ga)Se<SUB>2</SUB> (CIGS) absorbers and solar cells. We report on the influence of these species on the surface and bulk composition as well as bulk defect structure of CIGS films as revealed by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and photoluminescence (PL). From the XPS studies it is found that Na and K promote oxygen absorption onto the CIGS films. Furthermore, potassium accelerates the formation of indium and gallium oxides on the film surface, making the surface Cu-deficient. Low temperature PL studies suggest that (i) Na and K help passivate non-radiative recombination centers, presumably at the grain boundaries, and (ii) Na further impacts the bulk defect structure inside of CIGS grains, which is not observed with K. This change in bulk defect structure is attributed to the greater diffusivity of Na in CIGS relative to K due to the smaller atomic size. This in-depth study (integration of XPS, SIMS, PL, and device characteristics) reveals that the surface chemistry and the grain boundary passivation have stronger influences on the device performance than the bulk defect structure.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Effects of alkali elements-Na and K-onCIGS are studied using SIMS, XPS, and PL. </LI> <LI> Alkali elements passivate non-radiative recombination centers at grain boundaries. </LI> <LI> The device with Na and K shows the highest efficiencies due to <I>surface</I> passivation. </LI> <LI> Passivation of both <I>external interfaces</I> and <I>internal grain boundaries</I> is crucial. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
