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김강민,Hitoshi Tampo,김신호,Hajime Shibata,Shigeru Niki,한혁수 한국물리학회 2017 Current Applied Physics Vol.17 No.3
Cu2ZnSnSe4 (CZTSe) films with different Zn/Sn ratios were fabricated using Cu2SnSe3 (CTSe) and ZnSe bilayer precursors (ZnSe/CTSe/Mo) and sandwich-structured precursors (ZnSe/CTSe/ZnSe/Mo). Using the bilayer precursor, excessive ZnSe on top of the CZTSe films with a Zn/Sn ratio of 1.3 that acts as a currentblocking barrier was observed, reducing the short-circuit current density of the CZTSe solar cells. Modification of the precursor structure from the bilayer to the sandwiched structure eliminates the segregation of ZnSe phase on top of the film even for a high (1.25) Zn/Sn ratio. This modification improved the cell efficiency from 6% (bilayer precursor) to 9% (sandwich-structured precursor).
Improving the performance of pure sulfide Cu(InGa)S2 solar cells via injection annealing system
권일영,Nagai Takehiko,Ishizuka Shogo,Tampo Hitoshi,Shibata Hajime,김신호,김양도 한국물리학회 2021 Current Applied Physics Vol.22 No.-
In this study, we present an effective method of improving the performance of pure sulfide Cu(InGa)S2 (CIGS) solar cells via injection annealing system. The injection annealing system can perform annealing at desired temperatures, and therefore, the CIGS thin film passed over the temperature range in which secondary phases occurs. Via the injection annealing system, secondary phase InSx was effectively removed from the surface of the CIGS thin films at the temperatures over 550◦C. This resulted in the formation of good-quality P–N junction CIGS devices, thereby improving significantly the performance of the CIGS solar cell. In addition, the open-circuitvoltage (VOC) and fill factor (FF) of the CIGS devices increased gradually with increasing annealing temperature in the range of 550–640◦C. It is speculated that the bulk defects were decreased as the annealing temperature increased. Finally, via injection annealing system, a pure sulfide CIGS solar cell with an efficiency of 12.16% was achieved.