http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Calculation of electron and hole impact ionization coeffcients in SiGe alloys
Yeom, K.,Hinckley, J.M.,Singh. J. 대전산업대학교 반도체기술연구소 1999 半導體技術硏究所報 Vol.1 No.-
Silicon-germanium alloys offer a system where the ratio of the electron impact ionization coefficiend (a) and hole impact ionization coefficient (B) varies from a value larger the unity (in high silicon content alloys), to a value smaller than unity (in high germanium content alloys). We report results for a and B for this alloy system. The electron results are based on a multivalley nonparabolic band structure. The hole results are based on a six-band k.p model for low energies coupled to an eight0band model for high energies. We find that for the alloy Si_0.4Ge_0.6, a~B. Alloy scattering is found to play an important role in determining the impact ionization coefficient. For compositions around Si_0.5Ge_0.5, the strong alloy scattering is found to suppress the impact ionization coefficient.
Yeom, K.,Hinckley, J.M.,Singh. J. 대전산업대학교 반도체기술연구소 1999 半導體技術硏究所報 Vol.1 No.-
Monte Carlo methods are used to model the electron and hole high-field transport in both unstrained and compressively strained silicon and silicon-germanium alloy. The data are analyzed to determine in what way the thermal noise properties of the carriers are affected by compressive, in-plane strain. Results include the longitudinal diffusion coefficient, the longitudinal noise temperature, and the longitudinal noise spectral density, for electric fields in the rage of 0-20 ㎸/㎝. The results are qualitatively similar for silicon with 1% compressive biaxial strain and for Si_0.9Ge_0.1/Si(001). The effects of strain are found to be more pronounced for electrons than for holes and are primarly related to changes in the conductivity effective mass.
Park, Jihye,Lee, Minah,Feng, Dawei,Huang, Zhehao,Hinckley, Allison C.,Yakovenko, Andrey,Zou, Xiaodong,Cui, Yi,Bao, Zhenan American Chemical Society 2018 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.140 No.32
<P>Redox-active organic materials have gained growing attention as electrodes of rechargeable batteries. However, their key limitations are the low electronic conductivity and limited chemical and structural stability under redox conditions. Herein, we report a new cobalt-based 2D conductive metal-organic framework (MOF), Co-HAB, having stable, accessible, dense active sites for high-power energy storage device through conjugative coordination between a redox-active linker, hexaaminobenzene (HAB), and a Co(II) center. Given the exceptional capability of Co-HAB for stabilizing reactive HAB, a reversible three-electron redox reaction per HAB was successfully demonstrated for the first time, thereby presenting a promising new electrode material for sodium-ion storage. Specifically, through synthetic tunability of Co-HAB, the bulk electrical conductivity of 1.57 S cm<SUP>-1</SUP> was achieved, enabling an extremely high rate capability, delivering 214 mAh g<SUP>-1</SUP> within 7 min or 152 mAh g<SUP>-1</SUP> in 45 s. Meanwhile, an almost linear increase of the areal capacity upon increasing active mass loading up to 9.6 mg cm<SUP>-2</SUP> was obtained, demonstrating 2.6 mAh cm<SUP>-2</SUP> with a trace amount of conducting agent.</P> [FIG OMISSION]</BR>