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Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation
Himchan Oh,박상희,Min Ki Ryu,황치선,Shinhyuk Yang,Oh Sang Kwon 한국전자통신연구원 2012 ETRI Journal Vol.34 No.2
By inserting H2O treatment steps during atomic layer deposition of a ZnO layer, the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer. From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS.
Inhibitory effects of Hwang-Ryun-Hae-Dok-Tang on cytochrome P450 in human liver microsomes
Lee, Sang Yoon,Jang, Himchan,Lee, Ji-Yoon,Ma, Jin Yeul,Oh, Soo Jin,Kim, Sang Kyum Informa UK Ltd. 2015 Xenobiotica Vol.45 No.2
<P>1. The herb-drug interaction potential of Hwang-Ryun-Hae-Dok-Tang (HR) extracts mediated by cytochrome P450 (CYP) inhibition was determined using human liver microsomes.</P><P>2. HR strongly inhibited CYP1A2 and moderately inhibited CYP2C19, CYP2D6, and CYP3A4 (testosterone) but not CYP2A6, CYP2B6, CYP2C8, CYP2C9, and CYP3A4 (midazolam).</P><P>3. The enzyme kinetic results suggest that CYP1A2 inhibition is competitively reversible (K<I><SUB>i</SUB></I>, 13.4 ± 1.8 μg/ml), and CYP2D6 inhibition is quasi-irreversible (K<I><SUB>I</SUB></I>, 0.234 ± 0.138 μg/ml; k<SUB>inact</SUB>, 0.067 ± 0.006 min<SUP>−1</SUP>).</P><P>4. Fermentation using <I>Lactobacillus acidophilus</I> attenuated the HR-induced inhibition of CYP2D6, but not the other isoforms.</P><P>5. Neither CYP1A2 nor CYP3A4 was markedly inhibited by berberine, palmatine, and geniposide—major components in HR—and CYP2D6 was inhibited by berberine (IC<SUB>50</SUB>, 13.8 μg/ml) in a metabolism-dependent manner.</P><P>6. The results suggest the possibility of HR-drug interaction through inhibition of CYP—particularly CYP2D6—which may be attenuated by fermentation using <I>L. acidophilus</I>.</P>
Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method
Chi-Sun Hwang,Sang-Hee Ko Park,Himchan Oh,Min-Ki Ryu,Kyoung-Ik Cho,Sung-Min Yoon IEEE 2014 IEEE electron device letters Vol.35 No.3
<P>Vertical channel ZnO thin-film transistors (TFTs) were fabricated on glass and flexible substrates. Conformally deposited thin films prepared using atomic layer deposition were used for the active layer, gate insulator, and gate electrode. Owing to the very short channel (0.5 μm) and very thin (20 nm) gate insulator layer, the ON-current of the vertical channel ZnO TFT was 57 μA at the gate and drain voltages of 3 and 4 V, respectively. Vertical channel oxide TFTs may be promising for device applications with low power consumption.</P>
Lee, Su-Jae,Hwang, Chi-Sun,Pi, Jae-Eun,Ryu, Min-Ki,Oh, Himchan,Cho, Sung Haeng,Yang, Jong-Heon,Ko Park, Sang-Hee,Chu, Hye Yong Elsevier 2014 Materials letters Vol.122 No.-
<P>ZnO-SnO2 nanocomposite thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO2 oxides target, and their field effect electronic transport properties investigated as a function of annealing temperature. The films have a nanocomposite structure consisting of ZnO and SnO2 nanoparticles. The amorphous ZnO-SnO2 nanocomposite thin films, as oxide semiconductors, exhibited excellent electronic transport properties with saturation mobility of around 16.9 cm(2)/V s, turn-on voltage of 1 V, subthreshold swing of 0.22 V/decade, and high drain current on-to-off ratio of over 101, enough to operate for next-generation microelectronic devices. These results are presumed due to the unique electronic structure of amorphous nanocomposite coupled with two heavy-metal Zn and Sn cations having spherically symmetric s-orbitals. (C) 2014 Elsevier B.V. All rights reserved.</P>
Shinhyuk Yang,Jun Yong Bak,Sung-Min Yoon,Min Ki Ryu,Himchan Oh,Chi-Sun Hwang,Gi Heon Kim,Sang-Hee Ko Park,Jin Jang IEEE 2011 IEEE electron device letters Vol.32 No.12
<P>In-Ga-Zn-O thin-film transistors processed at 150°C on laminated polyethylene naphthalate substrates exhibit ing high electrical performances such as a saturation mobility of 24.26 cm<SUP>2</SUP>/(V · s), a subthreshold slope of 140 mV/dec, a turn-on voltage V<SUB>on</SUB> of -0.41 V, and an on-off ratio of 1.8 × 10<SUP>9</SUP> were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C.</P>