http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Heung-JinBak (검색결과 1 건)
- 무료
- 기관 내 무료
- 유료
-
Modi cation of the Development Parameter for a Chemically Ampli ed Resist Simulator
Eun-JungSeo,Heung-JinBak,Sang-KonKim,Young-SooSohn,Hye-KeunOh 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
It is necessary to have more appropriate resist parameters in order for a lithography simulator to predict real photoresist proles. These process parameters are usually obtained by ood exposure experiments without pattern masks. However, real processes are performed with pattern masks. Since the intensity on the wafer is dierent with and without a pattern, the development parameters must be modied in order to predict real processes. Especially, the development parameters, one example of the process parameters, are crucial to mimic real processes. It has been reported that the development parameters of a photoresist with or without underlying patterns are dierent. In this paper, we modied the ood exposure development parameters of a 248-nm chemically amplied resist (CAR) to get patterned development parameters and compared them with the simulation results. First, we obtained the development parameters by using a ood exposure experiment and applied them to our lithography simulator LUV. The simulated resist proles were then compared to SEM microphotographs. Second, we modied the development parameters for the simulated resist prole to match the SEM photographs. We also determined the relationship between the changes of the parameters and the pattern prole. We could see the eect of the modication in dierent line widths and sidewall angle.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
